Transport mechanism in ambipolar pentacene organic thin film transistors with lithium fluoride gate dielectric

Rahimi, Ronak; Korakakis, D.

doi:10.1063/1.3597323

Cited by 6 publications

(10 citation statements)

References 24 publications

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“…To explain the transport mechanism, the output characteristics with different gate voltages are analyzed with the Fowler Nordheim (F–N) tunneling theory. 31 In F–N tunneling, the field emission current ( J ) density can be represented as 32 where ϕ is the work function, E denotes the applied electric field. And E can be expressed as βV, where β represents the field enhancement factor.…”

Section: Results and Discussionmentioning

confidence: 99%

“…The linear region with a negative slope at a high electric field for both the devices D1 and D2 represents the F–N tunneling. 32 In the high field region with an increasing applied field, the bands start to bend, and the barrier height between GO and the pentacene layer increases which helps to form a narrow potential well, resulting in a higher probability of F–N tunneling. The regions of positive slope with a low applied electric field exhibit multistep hopping governed by localized states.…”

Section: Results and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory

Sarkar¹,

Pal²,

Banerji³

2019

ACS Omega

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In this report, the dielectric nature of graphene oxide (GO) was exploited for the successful implementation of low-power pentacene thin-film transistors suitable for nonvolatile memory applications. Two different types of devices were fabricated on indium tin oxide-coated glass substrates with two different metals, viz., gold and aluminum, as the source and drain contacts. The performance of the devices was analyzed from their field-effect characteristics. Both the devices showed dominant p-type charge transport behavior. The breakdown electric field was determined to be 1.02 × 10 8 V/m. The current transport mechanism was explained from the output characteristics using the Fowler–Nordheim tunneling theory. Capacitance–voltage ( C – V ) measurements have been employed to determine the value of the oxide capacitance and to examine the memory effect. The hysteresis behavior observed from the C – V characteristics show the suitability of the device for memory applications with a low operating voltage of 3 V. The charge trapping behavior of GO was explained by the energy band diagram. Frequency-dependent C – V measurements in the range 100 kHz to 1 MHz were also performed to account for the memory window obtained in the devices. The charge retention and endurance characteristics were evaluated under a constant voltage stress to check the reliability of device operation.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory

Sarkar¹,

Pal²,

Banerji³

2019

ACS Omega

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“…Note that field emission becomes dominant only in low temperature, high field and high V g -induced charge density regime. It is worth mentioning that field-emission behavior in organic FETs has also been reported recently 24 , but the crossover from thermally assisted hopping to field emission with decreasing temperature has not been shown yet. Moreover, the transition from tunneling to field emission remarkably resembles that in molecular junction transistors 23 25 26 .…”

Section: Resultsmentioning

confidence: 89%

Multi-barrier field-emission behavior in PBTTT thin films at low temperatures

Kang

Kim

2015

Sci Rep

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We investigated the low-temperature transport mechanism for poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene] (PBTTT). The temperature-dependent transport behavior was studied by varying the drain–source electric field and gate bias. The results suggest that low-temperature charge transport is dominated by direct tunneling at low electric fields, while field emission is prevailing for high electric fields with high carrier densities. However, the obtained barrier heights are remarkably greater than expected in a conventional field emission. We propose a simplified model of field emission through quasi-one-dimensional path with multiple barriers which shows good agreement with the results more clearly. Field emission across the domain boundaries may assist in overcoming the transport barriers induced by the interchain disorder, which results in the weak temperature dependence of conductivities and nonlinear current–voltage relation at low temperatures.

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“…It has been shown that under atmospheric conditions, LiF can form anions and cations which introduce dopant into the organic semiconductor. This ion drifting which is controllable by applied gate bias modifies the electrical behavior of the organic material and results in an ambipolar transport [16][17][18][19][20]. The effect of the gate bias on the doping process has been studied using Fourier transform infrared (FTIR) spectroscopy and micro-Raman spectroscopy [21][22][23].…”

Section: Resultsmentioning

confidence: 99%

Effect of dielectric/organic interface properties on the performance of the organic thin film transistors

Rahimi

Korakakis

2013

MRS Proc.

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In order to manufacture organic electronic devices with high performance, more detailed studies of the structure and the morphology of the organic materials as well as the underlying physical charge transport mechanisms are warranted. For instance, high efficiency organic thin film transistors (OTFTs) require materials with high charge carrier mobility [1,2]. The parameters that determine the charge carrier mobility of the device include the structure of the first organic layer at the organic-dielectric interface as well as the morphology and the structural order of the other organic layers. Therefore, fundamental questions about structural properties of organic materials should be answered in order to optimize device performance [2][3][4].In this work, several bilayer structures of LiF/PTCDI-C8 and LiF/pentacene were prepared and their morphology and molecular structure were characterized using X-ray reflectivity (XRR) technique. In order to study the effects of the films' structures and dielectric/organic interfacial properties on the device performance, OTFTs based on these bilayers were fabricated and characterized. It has been observed that PTCDI-C8 thin films have higher molecular packing in the LiF/PTCDI-C8 bilayer structure, which results in superior electrical characteristics for OTFTs based on this organic material. Devices with LiF/PTCDI-C8 bilayer exhibit about one order of magnitude higher output current (I ds ) at a constant drain-source voltage (V ds ) compared to the devices with LiF/pentacene bilayer. The observed differences in the electrical characteristics of these devices can be attributed to the effects of the dielectric/organic interface and the molecular structure of the organic layers.

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Transport mechanism in ambipolar pentacene organic thin film transistors with lithium fluoride gate dielectric

Cited by 6 publications

References 24 publications

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory

Graphene Oxide as a Dielectric and Charge Trap Element in Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory

Multi-barrier field-emission behavior in PBTTT thin films at low temperatures

Effect of dielectric/organic interface properties on the performance of the organic thin film transistors

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