Transport in GaAs/Al x Ga1−x As superlattices with narrow minibands: Effects of interminiband tunneling

Non-resonant tunnelling in short-period superlattices with optical cavities

“…Note that distinctive features were observed in [15] in I-V characteristics of GaAs/AlGaAs SLs with thin barriers and wide enough QWs (at liquid He temperature), which were attributed to resonant (inter-miniband) tunnelling between the QWs located at several SL periods from each other. In contrast to that work, we have to admit for our SLs that, first, the possibility of electron tunnelling across 10-13 SL periods would be possible and, second, the maxima in I-V curves would not be equidistant.…”

New approaches to THz bloch oscillator

“…At same time, gain near the Bloch frequency still can exist without a population inversion between different minibands [lo]. Monte Carlo simulation with simplified scattering integral demonstrates that NDC exists for the frequencies greater than the Bloch frequency [9]. However, we should note that this result is based on representation of Zener tunneling as a scattering event.…”

“…The scheme of Bloch oscillator with an account of interminiband transitions has been suggested in [8,9].The main idea of this approach is that the Zener tunneling between two nearest minibands, separated by a small gap, changes a static VI characteristic of superlattice. [8,9].…”

“…[8,9]. At same time, gain near the Bloch frequency still can exist without a population inversion between different minibands [lo].…”