We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1−xGex quantum-well structures. The lasing arises under strong electric fields (300–1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.
We present experimental results on continuous-wave generation of THz radiation by strained Ge and a theoretical model for population inversion of carriers giving rise to the stimulated THz emission. Resonant acceptor states induced by strain and resonance hole scattering under applied electric field are necessary for the inversion.
An intense THz emission was observed from strained SiGe/Si quantum-well structures under strong pulsed electric field. The p-type structures were MBE-grown on n-type Si substrates and δ-doped with boron. Lines with wavelengths near 100 microns were observed in the emission spectrum. The modal structure in the spectrum gave evidence for the stimulated nature of the emission. The origin of the THz emission was attributed to intra-centre optical transitions between resonant and localized boron levels.
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