2022
DOI: 10.3389/fchem.2022.879438
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Transport Characteristics of Interfacial Charge in SiC Semiconductor–Epoxy Resin Packaging Materials

Abstract: The silicon carbide (SiC) wide bandgap (WBG) semiconductor power device has been widely applied for its excellent properties. However, the charge accumulated in the interface of SiC semiconductor-related insulation packaging may lead to serious material performance degradation and failure, threatening the reliability and operation life of power devices. In this research, interface charge accumulation characteristics of SiC–epoxy resin double-layered material were investigated, and space charge injection, trans… Show more

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Cited by 6 publications
(5 citation statements)
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“…The maximum energy barrier of OER is transformed from * OH to * O as the RDS, which is consistent with the previous predictions results. [ 44 ] (Ru 2 Fe 2 Co 6 )OOH has an smallest energy barrier of 1.75 eV than (Ru 1 Fe 2 Co 7 )OOH of 1.82 eV and (Ru 3 Fe 2 Co 5 )OOH of 1.87 eV, proving the improved activity of (Ru 2 Fe 2 Co 6 )OOH. The overpotential of the OER by applying the equilibrium potential of 1.23 V was estimated to be 0.59, 0.52, and 0.64 eV for (Ru 1 Fe 2 Co 7 ) OOH, (Ru 2 Fe 2 Co 6 )OOH and (Ru 3 Fe 2 Co 5 )OOH, respectively (Figure 6f).…”
Section: Resultsmentioning
confidence: 89%
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“…The maximum energy barrier of OER is transformed from * OH to * O as the RDS, which is consistent with the previous predictions results. [ 44 ] (Ru 2 Fe 2 Co 6 )OOH has an smallest energy barrier of 1.75 eV than (Ru 1 Fe 2 Co 7 )OOH of 1.82 eV and (Ru 3 Fe 2 Co 5 )OOH of 1.87 eV, proving the improved activity of (Ru 2 Fe 2 Co 6 )OOH. The overpotential of the OER by applying the equilibrium potential of 1.23 V was estimated to be 0.59, 0.52, and 0.64 eV for (Ru 1 Fe 2 Co 7 ) OOH, (Ru 2 Fe 2 Co 6 )OOH and (Ru 3 Fe 2 Co 5 )OOH, respectively (Figure 6f).…”
Section: Resultsmentioning
confidence: 89%
“…41‐1471), which suggests that these catalysts are CoS 2 ‐based material with the content of Ru/Fe components. [ 44 ] Due to the difference in the atomic radius of Ru, Fe, and Co, the peak in the (2 0 0) plane of (Ru 1‐4x Fe x Co 3x )S 2 undergoes a large angular shift, indicating an effective substitution of Ru/Fe for Co into CoS 2 . [ 45 ] The weak peak at 26° corresponds to the graphitic carbon structure (0 0 2), indicating that carbon remains in all samples after pyrolysis.…”
Section: Resultsmentioning
confidence: 99%
“…Epoxy resin is a commonly utilized packaging material for electrical equipment and electronic devices because of its exceptional insulation performance, thermal resistance and mechanical strength. [1][2][3] However, epoxy typically has an intrinsically hard and brittle nature due to its crosslinked molecular structure. 4 Unfortunately, this attribute triggers the formation and spread of microcracks and defects while being processed and utilized, ultimately resulting in material breakdown and drastically reducing the lifespan of electronic equipment.…”
Section: Introductionmentioning
confidence: 99%
“…C. Wang et al have studied the trap characteristics for specific liquid rubber toughened epoxy resins through the thermally stimulated depolarization current method, finding that the trap energy level increases with an increasing rubber concentration, which may be considered in the application in such an epoxy resin system (Wang et al, 2022). C. Chen et al have investigated space charge accumulation for the SiC-epoxy resin interface, which may affect the insulation reliability of packaging materials (Chen et al, 2022).…”
mentioning
confidence: 99%