Transparent Zinc Oxide Films Chemically Prepared from Aqueous Solution

Izaki, Masanobu; Omi, Takashi

doi:10.1149/1.1837353

Cited by 149 publications

(101 citation statements)

References 2 publications

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“…The ZnO films are also prepared by an electroless deposition or chemical reaction instead of electrodeposition, which can be used to synthesize various materials because it does not require electrically conductive substrates [7,8]. Such methods can easily prepare films consisting of nanosized particles that have a high specific surface area due to the slow deposition rate.…”

Section: Introductionmentioning

confidence: 99%

Formation of ZnO thin films by photocatalytic reaction

Nishikiori

Nagaya

Takikawa

et al. 2014

Applied Catalysis B: Environmental

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Zinc oxide and layered zinc hydroxides were deposited from an aqueous solution of zinc nitrate at 323−358 K on a substrate plate with a very thin titanium dioxide film by a photocatalytic reaction. The amorphous or low crystalline zinc hydroxide aggregates were deposited at a low temperature. The zinc oxide crystals with about 1−2 μm-sized hexagonal columns and 10 nm-sized spheres were formed at 338−358 K. Nitrate ions in the solution were reduced to nitrite ions, and water was transformed into hydroxide ions by a photocatalytic reaction on the titanium dioxide film. The pH value increased on the substrate surface with the titanium dioxide film, which caused the zinc hydroxide formation on the film.The zinc hydroxides were then dehydrated and transformed into zinc oxide. The average crystallite size of the zinc oxide decreased with an increase in the reaction temperature because the reaction rates of the formation and dehydration of the zinc hydroxides increased which resulted in an increase in the formation rate of the crystal zinc oxide nuclei.

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Section: Introductionmentioning

confidence: 99%

Formation of ZnO thin films by photocatalytic reaction

Nishikiori

Nagaya

Takikawa

et al. 2014

Applied Catalysis B: Environmental

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“…Dimethylamine borane (DMAB), (CH 3 ) 2 NHBH 3 , is a technologically significant reducing agent for the electroless chemical deposition of metals [1][2][3][4][5][6][7][8], alloys [9][10][11][12], semiconductors [13,14] and most recently insulators [15]. Electroless deposition exhibits an advantage over electrodeposition in that deposition on insulators is possible following a catalytic activation of the substrate.…”

Section: Introductionmentioning

confidence: 99%

Investigation of DMAB Oxidation at a Gold Microelectrode in Base

Nagle

Rohan

2005

Electrochemical and Solid-State Letters

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Access to the full text of the published version may require a subscription. determined, the coulomb number for both oxidation waves was shown to be 3. The first wave may be further resolved in dilute solutions revealing three 1-electron steps. RightsThe concentration range wherein the maximum coulombic efficiency for DMAB oxidation on gold may be achieved is demonstrated. An oxidation pathway with a variable coulomb number is suggested.3

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“…The Cu 2 O layers for the photovoltaic application have been prepared by several techniques such as a thermal oxidation of a metallic Cu sheet [3], RF magnetron sputtering [4], and electrodeposition [5]. The ZnO layers have been prepared by electrodeposition in an aqueous solution containing either zinc nitrate [6] or zinc chloride [7] as well as gas-phase deposition techniques such as sputtering, molecular beam epitaxy, and laser ablation techniques. The electrodeposition process in aqueous solutions is a well-known technique due to several advantages such as low-fabrication cost, low temperature, ambient pressure processing, controllable film thickness, and possible large scale deposition, as demonstrated for the CuIn x Ga 1-x Se 2 solar cell production.…”

Section: Introductionmentioning

confidence: 99%

Photon-Assisted Electrodeposition of <0001>-n-ZnO/<111>-p-Cu<sub>2</sub>O Photovoltaic Devices with TiO<sub>2</sub> Intermediate Layer

Zamzuri

Sasano

Mohamad

et al. 2015

AMM

Self Cite

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Abstract. The <111>-Cu 2 O/<0001>-ZnO photovoltaic (PV) device has been constructed by a electrodeposition f Cu 2 O layer followed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO 2 layer prepared by a sol-gel technique on the photovoltaic performance was investigated. The structural, optical, and electrical characterizations were carried out with XRD, FE-SEM, UV-Vis-NIR spectrophotometer, and solar simulator. The performance of AZO/<0001>-ZnO/TiO 2 /<111>-Cu 2 O PV-devices changed depending on the preparation condition for the TiO 2 layer, and the short-circuit current density of 4.86 mAcm -2 has been obtained for the PV device prepared under optimized condition. IntroductionA photovoltaic device composed of p-Cu 2 O and n-ZnO semiconductors has received broad attention as a candidate of the next generation thin film solar cell, because of the nontoxicity, abundance, theoretical conversion efficiency of around 18% [1], and an absorption coefficient higher than a single crystalline Si [2]. The Cu 2 O layers for the photovoltaic application have been prepared by several techniques such as a thermal oxidation of a metallic Cu sheet [3], RF magnetron sputtering [4], and electrodeposition [5]. The ZnO layers have been prepared by electrodeposition in an aqueous solution containing either zinc nitrate [6] or zinc chloride [7] as well as gas-phase deposition techniques such as sputtering, molecular beam epitaxy, and laser ablation techniques. The electrodeposition process in aqueous solutions is a well-known technique due to several advantages such as low-fabrication cost, low temperature, ambient pressure processing, controllable film thickness, and possible large scale deposition, as demonstrated for the CuIn x Ga 1-x Se 2 solar cell production. The conversion efficiency, however, was limited at 1.28% for the randomly oriented Cu 2 O/ZnO heterojunction diode prepared only by electrodeposition [8]. The quality of the Cu 2 O layer was improved by using an electrochemical heteroepitaxial growth [9], and a photon-assisted electrochemical growth of the ZnO layer without the reduction of Cu 2 O to metallic Cu was developed [10]. Here, we prepare <0001>ZnO/<111>Cu 2 O PV device by the heteroepitaxial and photon-assisted electrochemical process, and the effects of the insertion of a TiO 2 layer prepared by a sol-gel process were investigated by the structural, optical, and electrical characterizations.

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Transparent Zinc Oxide Films Chemically Prepared from Aqueous Solution

Cited by 149 publications

References 2 publications

Formation of ZnO thin films by photocatalytic reaction

Formation of ZnO thin films by photocatalytic reaction

Investigation of DMAB Oxidation at a Gold Microelectrode in Base

Photon-Assisted Electrodeposition of <0001>-n-ZnO/<111>-p-Cu<sub>2</sub>O Photovoltaic Devices with TiO<sub>2</sub> Intermediate Layer

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Transparent Zinc Oxide Films Chemically Prepared from Aqueous Solution

Cited by 149 publications

References 2 publications

Formation of ZnO thin films by photocatalytic reaction

Formation of ZnO thin films by photocatalytic reaction

Investigation of DMAB Oxidation at a Gold Microelectrode in Base

Photon-Assisted Electrodeposition of &lt;0001&gt;-n-ZnO/&lt;111&gt;-p-Cu<sub>2</sub>O Photovoltaic Devices with TiO<sub>2</sub> Intermediate Layer

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Photon-Assisted Electrodeposition of <0001>-n-ZnO/<111>-p-Cu<sub>2</sub>O Photovoltaic Devices with TiO<sub>2</sub> Intermediate Layer