Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

Seo, Jung Won; Park, Jae-Woo; Lim, Keong Su; Yang, Ji-Hwan; Kang, Sang-Won

doi:10.1063/1.3041643

Cited by 194 publications

(125 citation statements)

References 14 publications

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“…In comparable with the traditional nonvolatile memories (flash), RRAM exhibits unique advantages including much faster writing rate, smaller bit cell size, and lower operating voltages. In particular, the resistive transition induced by applying electric pulses can complete within tenths of nanoseconds at room temperature while the resultant resistance states could be retained for 10 years [2,6,7].…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the primary requirement for RRAM is to develop a material that possesses resistive switching effect. To date, a number of materials have been found to have resistive switching behavior, for example, ferromagnetic oxide (Pr 1−x Ca x MnO 3 ), doped perovskite oxide (SrZrO 3 ), and binary transition metal oxide (TiO 2 , NiO, ZnO, and Cu 2 O) [1,2,4,6,[8][9][10][11]. Among these materials, only the transition metal oxides are transparent to the visible light due to their large optical band gap.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

Chu

Younis

2012

ISRN Nanotechnology

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High quality Co-doped ZnO films were prepared with electrodeposition. The correlation among the surface morphology, lattice structure, Co-dopant distribution, and resistance switching properties of the as-deposited films were investigated. It is found that resistance switching behaviour could be manipulated by controlling the composition of Co in the ZnO films. The significant enhancement of resistance switching was achieved with 5 at% Co doping in the films, and the possible switching mechanism was also discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

Chu

Younis

2012

ISRN Nanotechnology

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“…This sacrifice can be eliminated using resistive switching memory that functions on a non-charge-based mechanism 10 , provided that transparency is achieved both in the resistance-change (active) material and the electrodes. Although this search has recently been done in metal oxides and organic materials [11][12][13] , a hightransparency memory device based on more conventional materials is desirable for processing and application reasons. Using silicon oxide (SiO x , x~2) and graphene, the former a ubiquitous material favoured by the semiconductor industry and the latter a promising two-dimensional conductor 14 , we demonstrate here a nonvolatile memory device featuring both high transparency and robust retention, further implemented on a flexible plastic substrate.…”

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confidence: 99%

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Yao¹,

et al. 2012

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Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using sio x as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the sio x maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.

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“…Seo et al fabricated ITO (indium tin oxide)/ZnO/ITO structure and studied its resistive switching characteristics. 45) The ITO/ZnO/ ITO structure including the substrate had a transmittance of 81% in the visible region and an excellent switching behavior under 3 V. The retention study suggests that the ITO/ZnO/ITO device could maintain its memory property for more than 10 years.…”

Section: Jcs-japanmentioning

confidence: 81%

Transition metal oxide thin films for nonvolatile resistive random access memory applications

Bao

2009

J. Ceram. Soc. Japan

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Resistive random access memory (RRAM) based on reversible bistable resistance switching effect is attracting much attention for its superior properties such as nonvolatility, long retention time, simple device structure, small size, and low operating voltage. The unique resistance switching properties have been observed in some binary transition metal oxides, perovskite oxides, and organic molecular materials. This paper briefly reviews the status and new progress on binary transition metal oxide thin film materials such as NiO, TiO2, ZrO2, ZnO, and their multilayered thin films and metal nanocomposite thin films, for resistive random access memory applications, and also presents some of our own research work in this field. There is no doubt that study on transition metal oxide thin films for RRAM application will have been a topic of great interest in the forthcoming years, and it is expected that better understanding of physical mechanisms for the bistable resistance switching of the transition metal oxide thin films sandwiched between two metal electrodes can be achieved.

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Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

Cited by 194 publications

References 14 publications

Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

Enhancement of Resistance Switching in Electrodeposited Co-ZnO Films

Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Transition metal oxide thin films for nonvolatile resistive random access memory applications

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