This report covers the fabrication of a fully transparent resistive random access memory (TRRAM) device based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81% (including the substrate) in the visible region and an excellent switching behavior under 3V. The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.

We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ITO (indium tin oxide)/ZnO (zinc oxide)/ITO/Ag/ITO capacitor structure on a polyethersulfone flexible substrate. The ITO/Ag/ITO multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ITO single bottom electrode during repetitive bending tests. The devices exhibit a high transmittance and the excellent reliability of data retention. Moreover, they show consistent memory performance, even under thermal stress. The results of this study provide a breakthrough solution for the era of transparent and flexible electronic systems in the near future.

Abstract-We report a new structure of high-responsivity photodetectors that utilizes the transparent and metallic zinc oxide (ZnO) gate in bulk silicon metal-oxide-semiconductor field-effecttransistor photodetectors. The device has a small optical window only in the channel region, and all other regions (depletion) are protected from external light. Whereas the amplification of photocurrent by external light was not significant at the floated or positively biased substrate, the photocurrent was enhanced at the grounded or negatively biased substrate due to the decrement of the recombination rate in the n-channel MOSFET. Responsivity was in excess of 1500 A/W under white-light illumination, which is higher than that of conventional photodetectors with the semitransparent polycrystalline-silicon gate.Index Terms-Field-effect phototransistor, photodetector, transparent gate.

We present modeling and simulation of the constant photocurrent method (CPM) measurements on a single p-i-n junction a-Si:H solar cell. Two types of D-states with Gaussian distribution were introduced for describing subbandgap absorption, originated from the electron transition from the Dstates to the conduction band. The subbandgap absorption spectra obtained by CPM measurements on p-i-n a-Si:H solar cells are given by solving Poission's equation, continuity equation, and current equation simultaneously. The effect of Dstate characteristics on the subbandgap absorption coefficient spectra of p-i-n a-Si:H solar cells is investigated systematically.