Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition

Experimental determination of band offsets of NiO-based thin film heterojunctions

“…The first step in realizing transparent semiconductor devices is obtaining p-type conducting films and fabricating a visible light-transparent pn-junction by a simple, conventional, and economical deposition technique. In fact, NiO has attracted attention because Li-, 4,5 K-, 6 Cu-, 7 or unintentionally doped NiO shows p-type conductivity. [8][9][10][11] Therefore, transparent diodes, [12][13][14][15][16] ultraviolet (UV)-visible light emitting diodes, 17 and UV detectors 18 have been fabricated by using p-type NiO and n-type oxide semiconductors (e.g., ZnO) because indirect and direct bandgap energies of NiO are approximately 3.7 eV.…”

One-step synthesis of Li-doped NiO as high-performance anode material for lithium ion batteries

“…In fact, NiO films have been widely studied as a promising p-type transparent conducting oxides (TCOs) [48][49][50][51][52]. One of the most attractive advantages of NiO is the possibility of modifying its electrical conductivity.…”

“…One of the most attractive advantages of NiO is the possibility of modifying its electrical conductivity. Doping of some monovalent atoms such as lithium [53][54][55][56], sodium [57], and potassium [52] can increase the number of Ni 3 þ ions and then increase the electrical conductivity of NiO films. Among them, the ionic radius of Li þ is 0.76 Å, which is similar to the ionic radius of Ni 2 þ (0.69 Å).…”

Fabrication of visible‐light transparent solar cells composed of NiO/NixZn1‐xO/ZnO heterostructures

“…The first step in realizing transparent semiconductor devices is obtaining p-type conducting films and fabricating a visiblelight transparent pn junction through a simple, conventional, and economical deposition technique. In fact, NiO has attracted attention because Li- [4,5], Na- [6], K- [7], Cu- [8], N- [9], or unintentionally doped NiO shows p-type conductivity [10][11][12]. Therefore, visible-light-transparent diodes [13][14][15], ultraviolet (UV)/visible light-emitting diodes [16], and UV detectors [17] have been fabricated by using p-type NiO and n-type oxide semiconductors (e.g., ZnO).…”