Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells

Oh, Byung Ho; Kim, Jeong Hwan; Han, Jin Woo; Seo, Dae Shik; Jang, Hwan Soo; Choi, Ho Jin; Baek, Seong‐Ho; Kim, Jae Hyun; Heo, Gi Seok; Kim, Tae Won; Kim, Kwang Young

doi:10.1016/j.cap.2011.06.017

Cited by 30 publications

(19 citation statements)

References 24 publications

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“…Swatowska et al [ 22 ], Li et al [ 23 ], and Wu et al [ 24 ] investigated Al concentration on the properties of ALD-deposited AZO films. Macco et al [ 25 ] and Oh et al [ 26 ] demonstrated application of the ALD-deposited AZO films to solar cells. Mundle et al applied AZO films to memristor applications [ 27 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

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Section: Introductionmentioning

confidence: 99%

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

et al. 2022

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“…The substitutional doping of Al 3+ at the Zn 2+ site will lead to a reduction of the lattice parameter in the ZnO phase and then result in the peak shift [ 28 ]. More detailed results and discussions of ALD-deposited AZO films are described elsewhere [ 29 ].…”

Section: Resultsmentioning

confidence: 99%

Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

et al. 2012

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In this study, we have fabricated and characterized the silicon [Si] wire solar cells with conformal ZnO nanorod antireflection coating [ARC] grown on a Al-doped ZnO [AZO] seed layer. Vertically aligned Si wire arrays were fabricated by electrochemical etching and, the p-n junction was prepared by spin-on dopant diffusion method. Hydrothermal growth of the ZnO nanorods was followed by AZO film deposition on high aspect ratio Si microwire arrays by atomic layer deposition [ALD]. The introduction of an ALD-deposited AZO film on Si wire arrays not only helps to create the ZnO nanorod arrays, but also has a strong impact on the reduction of surface recombination. The reflectance spectra show that ZnO nanorods were used as an efficient ARC to enhance light absorption by multiple scattering. Also, from the current-voltage results, we found that the combination of the AZO film and ZnO nanorods on Si wire solar cells leads to an increased power conversion efficiency by more than 27% compared to the cells without it.

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“…A favorable option such as Al-doped ZnO (AZO) shows promise in the areas of biosensing [9][10][11], solar cell development [12][13][14], nonlinear optics [15][16][17], and tunable nano-photonic devices [18,19]. Atomic layer deposition (ALD) is a thin film deposition method which conformally deposits materials with negligible defects on a variety of substrate surfaces [20][21][22][23]. Because of the self-limiting surface chemical reactions [24], ALD is used to fabricate nanoscale ultra-thin films with high uniformity and surface smoothness [23,[25][26][27][28].…”

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confidence: 99%

“…Atomic layer deposition (ALD) is a thin film deposition method which conformally deposits materials with negligible defects on a variety of substrate surfaces [20][21][22][23]. Because of the self-limiting surface chemical reactions [24], ALD is used to fabricate nanoscale ultra-thin films with high uniformity and surface smoothness [23,[25][26][27][28]. The thickness of the films deposited by ALD is easily controlled by changing the number of deposition cycles [21].…”

mentioning

confidence: 99%

“…The thickness of the films deposited by ALD is easily controlled by changing the number of deposition cycles [21]. The optical and electrical properties, such as the plasma frequency, of the AZO film grown by ALD is tuned by changing the deposition conditions such as growth temperature [23,29,30], different doping level of Al [26,31], and post-deposition annealing [32].…”

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Atomic layer deposition of ultra-thin and smooth Al-doped ZnO for zero-index photonics

Anopchenko

Gurung

Tao

et al. 2018

Mater. Res. Express

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We report fabrication of smooth Al-doped ZnO (AZO) films < 100 nm by atomic layer deposition (ALD) with epsilon-near-zero (ENZ) frequencies in the near-infrared region controlled by deposition parameters. Excitation of the ENZ plasmon-polariton mode in the AZO films is experimentally demonstrated. The ALD growth of smooth ultra-thin AZO nanolayers with tunable ENZ frequency enables the development of ultra-compact and tunable metamaterial devices and flat nonlinear/quantum zero-index optics.

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Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells

Cited by 30 publications

References 24 publications

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Fabrication and characterization of silicon wire solar cells having ZnO nanorod antireflection coating on Al-doped ZnO seed layer

Atomic layer deposition of ultra-thin and smooth Al-doped ZnO for zero-index photonics

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