Transparent Conductive Zinc Oxide and Its Derivatives

Ellmer, K.

doi:10.1007/978-1-4419-1638-9_7

Cited by 58 publications

(73 citation statements)

References 291 publications

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“…Nanocrystalline zinc oxide usually is highly resistive, since the large surface facilitates the chemisorption of acceptor molecules of oxygen. Doping of zinc oxide with M 3+ cations, which can be incorporated into ZnO crystal lattice and act as donor impurities, allows increasing the conductivity of the material [4]. Trivalent cations Ga 3+ and In 3+ have the closest values of the effective ionic radii to that of Zn 2+ [5].…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content

et al. 2017

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Nanocrystalline ZnO, ZnO(Ga), and ZnO(Ga, In) samples with different indium contents were prepared by wet-chemical method and characterized in detail by ICP-MS and XRD methods. Gas sensing properties toward NO 2 were studied at 150-450 • C by DC conductance measurements. The optimal temperature for gas sensing experiments was determined. The dependence of the ZnO(Ga, In) sensor signal to NO 2 at 250 • C correlates with the change of conductivity of the samples. The introduction of indium into the system leads to an increase in the values of the sensor signal in the temperature range T < 250 • C. The investigation of the local sample conductivity by scanning spreading resistance microscopy demonstrates that, at high indium content, the sensor properties are determined by the In-Ga-Zn-O layer that forms on the ZnO surface.

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Section: Introductionmentioning

confidence: 99%

Highly Sensitive ZnO(Ga, In) for Sub-ppm Level NO2 Detection: Effect of Indium Content

et al. 2017

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“…Moreover, the resistivity of the intrinsically doped film can be reduced only up to 10 -2 -10 -3 X cm. Thus, these intrinsically doped films are not well suited for device application (Elmer 2010).…”

Section: Resultsmentioning

confidence: 99%

“…(3), when In 2 O 3 , which is a group III oxide, is added to ZnO, it is assumed that, being a group III dopant atom, indium will occupy the zinc lattice site spending the additional electrons which are not required for the bonding to the conduction band (Elmer 2010):…”

Section: Resultsmentioning

confidence: 99%

Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide

2012

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The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 X -1 cm -1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 X -1 cm -1 , whereas the conductivity of indium oxide-doped films is increased up to 3.5 9 10 3 X -1 cm -1 . Further, the optical band gap of the ZnO thin film is widened from 3.26 to 3.3 eV when doped with indium oxide and with metallic indium it decreases to 3.2 eV. There is no considerable change in the transmittance of the films after doping. All undoped and doped films were amorphous in nature with smooth and flat surface without significant modifications due to doping.

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“…Among wide band gap II-VI semiconductors, ZnO seems to be one of the most promising materials for optoelectronic applications. This is due to its stable excitons, having a large binding energy of 60 meV [Ellmer et al, 2008, Jagadish & Pearton, 2006, which is important for applications of UV light-emitting devices and laser diodes with high efficiency. Therefore, growth of p-type conductive ZnO material is a prerequisite step since ZnO is intrinsically n-type [Look et al, 2001].…”

Section: Introductionmentioning

confidence: 99%