2012
DOI: 10.1007/s13204-012-0161-1
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Study of the doping of thermally evaporated zinc oxide thin films with indium and indium oxide

Abstract: The present paper reports observations made on investigations carried out to study structural, optical and electrical properties of thermally evaporated ZnO thin films and their modulations on doping with metallic indium and indium oxide separately. ZnO thin film in the undoped state is found to have a very good conductivity of 90 X -1 cm -1 with an excellent transmittance of up to 90 % in the visible region. After doping with metallic indium, the conductivity of the film is found to be 580 X -1 cm -1 , wherea… Show more

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Cited by 11 publications
(2 citation statements)
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References 25 publications
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“…Many groups have improved the carrier concentration of the TCO by doping the group III elements like indium into ZnO. [20][21][22][23] Indium acts as a dopant since it has a similar atomic radius to Zn 2+ . It can substitute Zn 2+ in ZnO to form In + Zn substitution, which is an n-type dope for ZnO.…”
Section: Introductionmentioning
confidence: 99%
“…Many groups have improved the carrier concentration of the TCO by doping the group III elements like indium into ZnO. [20][21][22][23] Indium acts as a dopant since it has a similar atomic radius to Zn 2+ . It can substitute Zn 2+ in ZnO to form In + Zn substitution, which is an n-type dope for ZnO.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that a graded buffer layer (n/n ++ ) with increasing carrier concentration from the absorber to the TCO layer enhances the carrier collection efficiency in the thin film solar cells. Indium, aluminum and gallium are well-known dopants to increase carrier concentration, which can improve and/or control the electrical conductivity of ZnO for its application as TCO [16][17][18]. These dopants act as a donor when it occupies a substitutional position for Zn 2+ cation or an interstitial position in the lattice [19].…”
Section: Introductionmentioning
confidence: 99%