Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition

Abstract

Articles you may be interested inEffects of gas environment on electronic and optical properties of amorphous indium zinc tin oxide thin films J. Vac. Sci. Technol. A 31, 031508 (2013); 10.1116/1.4801023 Optical characteristics of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films grown on fused quartz substrate AIP Conf. Highly conductive indium zinc oxide prepared by reactive magnetron cosputtering technique using indium and zinc metallic targets J. Vac. Sci. Technol. A 28, 425 (2010); 10.1116/1.3372806Microstructure investigations of indium tin oxide films cosputtered with zinc oxide at room temperature Transparent conductive indium zinc oxide films were prepared by pulsed plasma deposition from a ceramic target (90 wt. % In 2 O 3 and 10 wt. % ZnO). The dependences of film properties upon the substrate temperature was investigated using characterization methods including x-ray diffraction, atomic force microscope, Hall measurement, ultraviolet-visible spectroscopy, and x-ray photoelectron spectroscopy. The films grown at room temperature had a rather smooth surface due to the amorphous structure, with a root mean square roughness of less than 1 nm. The atomic ratio of Zn/(Zn þ In) in these films is 15.3 at. %, which is close to that in the target, and the chemical states of indium and zinc atoms were In 3þ and Zn 2þ , respectively. The films deposited on a substrate with a temperature of 200 C exhibited polycrystalline structure and a preferred growth orientation along the (222) plane. Here the electrical properties were improved due to the better crystallinity, with the films exhibiting a minimum resistivity value of 4.2 Â 10 À4 X cm, a maximum carrier mobility of 45 cm 2 V À1 s À1 , and an optical transmittance over 80% in the visible region.

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“…7b to estimate the activation energy [(E c À E d ) or E a ]. 38,39 The slope obtained from this Arrhenius plot in the lower temperature regime (80-180 K) of the graph where the carrier concentration increases with temperature reflects the activation energy (E a = 2.302  k  slope) of the material which comes out to be as low as 8 meV. Such a small value of activation energy complements the existence of shallow level electronic states just below the conduction band edge of the material and in turn reflects qualitatively the exponential increment of the carrier concentration with increasing temperature.…”

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“…. 23 The peaks at 531.1 eV and 532.3 eV are attributed to the oxygen in In 2 O 3 lattice with oxygen vacancy (O V ) and the OH groups attached to indium ions, respectively. 17,23 Interestingly, as shown in Table I In 2 O 3 films deposited on AlO x -250 C and AlO x -350 C, indicating the presence of smaller concentration of oxygen vacancies in the latter two cases.…”

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“…PED is a well-established technology to fabricate thin films for photovoltaic, superconductor, and optoelectronic applications [11,12]. PED technology belongs to the family of the channel spark discharges, in which a target material is ablated by the local heating induced by an accelerated electron beam.…”