2006
DOI: 10.1016/j.surfcoat.2005.10.027
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Transparent conductive indium tin oxide film fabricated by dip-coating technique from colloid precursor

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Cited by 17 publications
(12 citation statements)
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“…2a, the maximum vertical distance between the highest and the lowest data points is approximately 100 nm. The root mean square (RMS) value is 20.2 nm, which nearly doubled the values established in a previous work (Gan et al, 2006). Findings suggest that a greater RMS value is associated with increase in mean crystallite size.…”
Section: Morphology Of the Ito Thin Filmssupporting
confidence: 42%
“…2a, the maximum vertical distance between the highest and the lowest data points is approximately 100 nm. The root mean square (RMS) value is 20.2 nm, which nearly doubled the values established in a previous work (Gan et al, 2006). Findings suggest that a greater RMS value is associated with increase in mean crystallite size.…”
Section: Morphology Of the Ito Thin Filmssupporting
confidence: 42%
“…The TEM image of ITO NPs annealed at 750 °C is shown in Figure a, which had a diameter of 6–12 nm. The high-resolution TEM image of ITO NPs in Figure b shows a crystal lattice fringe of 0.3 nm and was labeled (222) of ITO NPs. , …”
Section: Resultsmentioning
confidence: 99%
“…[54,61,62], sol-gel, data from Refs. [63,64], and colloid processed, data from Refs. [58][59][60] ITO thin films.…”
Section: Electrical Properties Of Ito@ag Thin Filmmentioning
confidence: 99%
“…(a) The figure of merit (FOM) of ITO and ITO@Ag thin films according to the weight percentage of silver and thermal-treatment temperature, and (b) graphical representation of optical transmittance and sheet resistance for sputter, data from Refs [54,61,62],. sol-gel, data from Refs [63,64],. and colloid processed, data from Refs [58][59][60].…”
mentioning
confidence: 99%