Influence of temperature and layers on the characterization of ITO films

Liu, Jiaxiang; Wu, Dezhen; Zeng, Shengnan

doi:10.1016/j.jmatprotec.2008.09.016

Cited by 41 publications

(20 citation statements)

References 19 publications

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“…[1][2][3][4][5] Indium tin oxide (ITO) is the usual candidate for TCO film due to its particular optical and electrical characteristics. 6) However, sources of ITO material will be rare and expensive in the future. Also, various ZnO-based thin films have been widely investigated because of their easy preparation and good optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

Hung

2011

Mater. Trans.

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ZnO/In/ZnO tri-layer thin films were designed and fabricated by RF sputtering on copolymer substrate. Under an electrical current, the thermoelectric effect of direct current (DC) reduced the electrical resistance and improved the crystallization and Raman properties. Also, indium atoms had migrated into the ZnO matrix and a diffusion layer in the ZnO/In interface had grown. The electrical current induced temperature is $140C and the copolymer substrate suffers no damage and so can be applied to the low temperature optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

Hung

2011

Mater. Trans.

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“…27 Decreased resistance upon increasing thickness of the film could be due to larger ITO particle size and packing of the spherical particles obtained by spray pyrolysis in the glass substrate. According to literature papers, 37,38 lower resistance of the ITO film with increasing number of layers of ITO thin film could result from rearrangement of the layers due to temperature-dependent crystal growth.…”

Section: Four-wire Testmentioning

confidence: 99%

ITO Obtained by Spray Pyrolysis and Coating on Glass Substrate

Campos¹,

Freiria²,

Ciuffi³

et al. 2017

J. Braz. Chem. Soc.

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Conductive thin films have various applications in different technological fields. Indium tin oxide (ITO) is a mixed oxide. In the film form, ITO has been widely employed as electrode in many optoelectronic devices. Methods like thermal evaporation, sputtering, chemical vapor deposition (CVD), electron beam, spray coating, and sol-gel synthesis give ITO thin films. In this work, we prepared ITO thin films by dip coating of a glass substrate into ITO obtained by spray pyrolysis. ITO consisted of spherical particles with different diameters. The ITO thin films were treated with laser. X-ray diffraction (XRD) analysis confirmed that spray pyrolysis produced spherical ITO particles. Transmittance analyses revealed the production of transparent films with thickness ranging from 0.800 to 1.200 μm. The four-wire test showed that the porosity of the films led to low conductivity. Film resistance was a function of the number of layers of ITO thin film.

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“…TC (hkl) values have been calculated from X-ray data, using the following equation [29][30][31][32][33][34]:…”

Section: Structural Analysesmentioning

confidence: 99%

“…Although this oxide was doped by several other elements, very few of these studies have been reported on rare-earth doping. In 2 O 3 thin films were prepared by many techniques such as MOCVD [21], chemical vapour transport (CVT) [22], sputtering [23], laser ablation [24], spray pyrolysis [25] and sol-gel [26,27]. Compared to other techniques, spray pyrolysis method is widely used to prepare indium oxide thin films.…”

Section: Introductionmentioning

confidence: 99%

Effect of europium content on physical properties of In2O3 thin films for sensitivity and optoelectronic applications

et al. 2016

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In 2 O 3 : Eu thin films were successfully grown by spray pyrolysis. XRD studies showed that the films had In 2 O 3 cubic structure with (004) preferential orientation and best crystal properties at 1.5% Eu doping level. The optical band gap energy decreased with Eu content around 4.1 eV. Urbach energy was of the order of 278 meV, it decreased with Eu content which indicates a decrease in the defects by doping. The dispersion of the refractive index was discussed. Raman spectroscopy showed the band positions corresponding to In 2 O 3 cubic phase with a small shift related to europium incorporation within In 2 O 3 matrix. PL measurements showed a large band which was located at 410 nm and related to the band-to-band transitions and other bands related to impurity levels. Finally, the electric conductivity was investigated depending on the effect of temperature. Activation energy was found to range from 45 to 60 meV for films which were prepared with 1% Eu content.

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Influence of temperature and layers on the characterization of ITO films

Cited by 41 publications

References 19 publications

Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

Crystallization Mechanism and Raman Characteristics of ZnO/In/ZnO Thin Film Using an Electrical Current Method

ITO Obtained by Spray Pyrolysis and Coating on Glass Substrate

Effect of europium content on physical properties of In2O3 thin films for sensitivity and optoelectronic applications

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