Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

Orita, Masahiro; Narushima, Tetsuya; Yanagita, Hiroaki

doi:10.1143/jjap.46.l976

Cited by 11 publications

(5 citation statements)

References 14 publications

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“…Figure 1 shows that the transmittance value also decreases with increasing film thickness. This behavior agrees well with other investigations [7]. The energy band- Fig.…”

Section: Table 1 Thickness and Band Gap Values For The Znse And Znte supporting

confidence: 93%

The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions

Potlog

Spalatu

Fedorov

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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This paper focuses on the photovoltaic parameters of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells. ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells were fabricated by Close Space Sublimation (CSS) on TCOcoated glass substrates. All types of solar cells were fabricated in a superstrate configuration. The thickness of ZnSe and ZnTe layers was varied in order to adjust the solar cell performance. A similar cadmium chloride solution for the treatment of a CdTe layer with an elevated temperature air annealing of the completed devices before the back contact deposition was applied to ZnSe/CdTe and CdS/CdTe thin film heterojunctions solar cells with exception of ZnTe/CdTe. All cells were characterized through light and dark current density-voltage (J-V) measurements and quantum efficiency (QE) measurements. The saturation current, ideality factor and photovoltaic parameters for all thin film heterojunction solar cells are presented. The investigation at the room temperature under illumination of 100 mW/cm 2 through the wide gap components of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe heterojunctions showed a value of conversion efficiency (η) of solar energy to electric energy about 4.7%, 9.9%, and 1.3%, respectively. The incorporation of Zn at the ZnSe and CdTe interface doubles the short circuit current density and improves the performance of ZnSe/CdTe thin film heterojunction solar cells.

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“…Figure 1 shows that the transmittance value also decreases with increasing film thickness. This behavior agrees well with other investigations [7]. The energy band- Fig.…”

Section: Table 1 Thickness and Band Gap Values For The Znse And Znte supporting

confidence: 93%

The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions

Potlog

Spalatu

Fedorov

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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“…Cu-immersion of polycrystalline ZnSe thin fi lms, similar in method to this work, incorporated up to 1 wt% Cu, causing the resistivity to drop eight orders of magnitude [30]. However, for co-evaporated 20% Cu films, ex situ annealing made the film non-conductive [31]. 1% Cu doping of ZnSe from the melt also showed an increase in resistivity with increased Cu content [32].…”

Section: Znse Nanowiresmentioning

confidence: 61%

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

et al. 2009

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We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.

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“…Furthermore, effect of annealing has been discussed in detail for all the deposited films. For annealing treatment, different methods have been adopted, such as for ZnSe films thermal annealing and laser annealing [13] have been used. Also different Parameters such as temperature, annealing time, atmosphere and pressure could be varied.…”

Section: Introductionmentioning

confidence: 99%

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

et al. 2013

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Thin films of Zn 1−x Cu x Se (x= 0.00, 0.05, 0.10, 0.15, 0.20) were grown on glass substrates by closed space sublimation technique. The deposited films were annealed at 200 • C and 400 • C in air for 1 h. The annealed samples have been investigated through Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), spectroscopic ellipsometer, spectrophotometer and Raman spectroscopy. Through RBS, the composition of the films was calculated and compared with the initial concentration. Structural characterization including crystal structure, crystal orientation, lattice parameter, grain size, strain and dislocation density were carried out using XRD data. From XRD spectra it was revealed that the as-deposited and annealed films were polycrystalline in nature with zinc-blende structure. However, the crystallinity and the grain size were improved with the increase of annealing temperature. According to Raman spectroscopy, it was observed that as deposited and annealed samples have the same characteristic vibrational modes of ZnSe at low and high frequency optical phonon modes while another mode was observed for 400 • C annealed samples at 745 cm −1 . Spectroscopic ellipsometer has been used to found annealing effect on the optical properties of ZnSe. The band gap energy has been determined using transmission spectra. It was found that the band gap energy of the film increased with the increase of annealing temperature.

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Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

Cited by 11 publications

References 14 publications

The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions

The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

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