Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System

Hoel, Cathleen A.; Mason, Thomas O.; Gaillard, Jean François; Poeppelmeier, Kenneth R.

doi:10.1021/cm1004592

Cited by 210 publications

(128 citation statements)

References 130 publications

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“…In so doing, solubility limits as high as x = 0.5 can be achieved, which is approximately double the amount of tin in ITO [5,6]. This does not double the conductivity of ITO, however, as the cosubstitution is not true doping because the tetravalent tin is counterbalanced by a divalent cation when replacing two trivalent cations.…”

Section: Introductionmentioning

confidence: 98%

“…In this instance, the system forms a single defined phase instead of a solid solution and departs from the bixbyite structure in order to provide a 4-coordinate site for Ge [13]. approximately double the amount of tin in ITO [5,6]. This does not double the conductivity of ITO, however, as the cosubstitution is not true doping because the tetravalent tin is counterbalanced by a divalent cation when replacing two trivalent cations.…”

Section: Introductionmentioning

confidence: 99%

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Site Identity and Importance in Cosubstituted Bixbyite In2O3

et al. 2017

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Abstract:The bixbyite structure of In 2 O 3 has two nonequivalent, 6-coordinate cation sites and, when Sn is doped into In 2 O 3 , the Sn prefers the "b-site" and produces a highly conductive material. When divalent/tetravalent cation pairs are cosubstituted into In 2 O 3 , however, the conductivity increases to a lesser extent and the site occupancy is less understood. We examine the site occupancy in the Mg x In 2−2x Sn x O 3 and Zn x In 2−2x Sn x O 3 systems with high resolution X-ray and neutron diffraction and density functional theory computations, respectively. In these sample cases and those that are previously reported in the M x In 2−2x Sn x O 3 (M = Cu, Ni, or Zn) systems, the solubility limit is greater than 25%, ensuring that the b-site cannot be the exclusively preferred site as it is in Sn:In 2 O 3 . Prior to this saturation point, we report that the M 2+ cation always has at least a partial occupancy on the d-site and the Sn 4+ cation has at least a partial occupancy on the b-site. The energies of formation for these configurations are highly favored, and prefer that the divalent and tetravalent substitutes are adjacent in the crystal lattice, which suggests short range ordering. Diffuse reflectance and 4-point probe measurements of Mg x In 2−x Sn x O 3 demonstrate that it can maintain an optical band gap >2.8 eV while surpassing 1000 S/cm in conductivity. Understanding how multiple constituents occupy the two nonequivalent cation sites can provide information on how to optimize cosubstituted systems to increase Sn solubility while maintaining its dopant nature, achieving maximum conductivity.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Site Identity and Importance in Cosubstituted Bixbyite In2O3

et al. 2017

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“…Structural families of metal-oxides that have been commonly explored in the literature are ABO 3 pervoskites [1][2][3][4][5], layered Ruddelsden-Popper pervoskites [6][7][8], and spinel structures [9][10][11]. Metal-oxide materials can also be classified by their properties that can include superconductors [12][13][14][15], transparent conducting oxides [16][17][18][19][20], and photocatalysts [21][22][23][24][25][26]. Variations of compositions within homologous families of structures exhibit important structural transformations (i.e., structural distortions, polymorphism) which impact their optical properties (i.e., range of light absorption for photocatalysis).…”

Section: Introductionmentioning

confidence: 99%

Polymorphism and Structural Distortions of Mixed-Metal Oxide Photocatalysts Constructed with α-U3O8 Types of Layers

et al. 2017

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Abstract:A series of mixed-metal oxide structures based on the stacking of α-U 3 O 8 type pentagonal bipyramid layers have been investigated for symmetry lowering distortions and photocatalytic activity. The family of structures contains the general composition A m+ ((n+1)/m) B (3n+1) O (8n+3) (e.g., A = Ag, Bi, Ca, Cu, Ce, Dy, Eu, Gd K, La, Nd, Pb, Pr, Sr, Y; B = Nb, Ta; m = 1-3; n = 1, 1.5, 2), and the edge-shared BO 7 pentagonal pyramid single, double, and/or triple layers are differentiated by the average thickness, (i.e., 1 ≤ n ≤ 2), of the BO 7 layers and the local coordination environment of the "A" site cations. Temperature dependent polymorphism has been investigated for structures containing single layered (n = 1) monovalent (m = 1) "A" site cations (e.g., Ag 2 Nb 4 O 11 , Na 2 Nb 4 O 11 , and Cu 2 Ta 4 O 11 ). Furthermore, symmetry lowering distortions were observed for the Pb ion-exchange synthesis of Ag 2 Ta 4 O 11 to yield PbTa 4 O 11 . Several members within the subset of the family have been constructed with optical and electronic properties that are suitable for the conversion of solar energy to chemical fuels via water splitting.

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“…6 It is also employed in varistors and gas sensors. 7 The deposition of ZTO by atomic layer deposition (ALD) is desirable as this technique allows for uniform and conformal growth on three dimensional, nanoscale topographies. 8 It is further of much interest to be able to produce ZTO at low temperatures making the processing compatible with a broader range of substrate materials and applications, and hence enabling lower production costs.…”

Section: Introductionmentioning

confidence: 99%

Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

Hägglund

Grehl²,

Tanskanen

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. A broad and expanding range of materials can be produced by atomic layer deposition at relatively low temperatures, including both oxides and metals. For many applications of interest, however, it is desirable to grow more tailored and complex materials such as semiconductors with a certain doping, mixed oxides, and metallic alloys. How well such mixed materials can be accomplished with atomic layer deposition requires knowledge of the conditions under which the resulting films will be mixed, solid solutions, or laminated. The growth and lamination of zinc oxide and tin oxide is studied here by means of the extremely surface sensitive technique of low energy ion scattering, combined with bulk composition and thickness determination, and x-ray diffraction. At the low temperatures used for deposition (150 C), there is little evidence for atomic scale mixing even with the smallest possible bilayer period, and instead a morphology with small ZnO inclusions in a SnO x matrix is deduced. Postannealing of such laminates above 400 C however produces a stable surface phase with a 30% increased density. From the surface stoichiometry, this is likely the inverted spinel of zinc stannate, Zn 2 SnO 4 . Annealing to 800 C results in films containing crystalline Zn 2 SnO 4 , or multilayered films of crystalline ZnO, Zn 2 SnO 4 , and SnO 2 phases, depending on the bilayer period.

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Transparent Conducting Oxides in the ZnO-In₂O₃-SnO₂ System

Cited by 210 publications

References 130 publications

Site Identity and Importance in Cosubstituted Bixbyite In2O3

Site Identity and Importance in Cosubstituted Bixbyite In2O3

Polymorphism and Structural Distortions of Mixed-Metal Oxide Photocatalysts Constructed with α-U3O8 Types of Layers

Growth, intermixing, and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition

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