Transparent and Flexible Resistive Random Access Memory Based on Al<sub>2</sub>O<sub>3</sub>Film With Multilayer Electrodes

Kim, Myeongcheol; Choi, Kyung Cheol

doi:10.1109/ted.2017.2716831

Cited by 31 publications

(16 citation statements)

References 19 publications

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“…In most of the reported studies, synaptic properties of the switching materials that have been employed toward the demonstration of flexible devices have not been studied. 7,8,[10][11][12][13][14]62 In some other published studies in which synaptic properties of the switching material have been studied, transferring of the active material or of the completed device is required, 9,63 the mechanical strain of devices is low, 65−68 while in others, the preparation of the active material is time-consuming. 61,69 These steps complicate device processing and could act as a bottleneck toward the scaling up of the process.…”

Section: Discussionmentioning

confidence: 99%

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Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Papakonstantinopoulos

Bousoulas

Tsigkourakos

et al. 2021

ACS Appl. Electron. Mater.

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The growth of flexible memory devices with intrinsic neuromorphic properties is attracting tremendous attention due to the wide spread of wearable electronics. The fabrication of robust artificial synaptic structures that will have the ability to remain operational after various strain loads and perform artificial synaptic weight modulation procedures is considered the cornerstone for the development of wearable neuromorphic computing systems. Along these lines, a low-temperature Ag/SiO 2 /TiN memristive device is demonstrated on a polyethylene naphthalate substrate decorated with Pt nanoparticles (NPs) with a 5 nm average diameter. The memory devices are completely forming-free, operate at a low voltage of 500 mV, and exhibit great stability after bending numerous times under a record high mechanical strain of 4.16% without any severe degradation of the pulse endurance and retention capabilities. Concrete pieces of evidence regarding the crack suppression effect induced by the layer of Pt NPs on the robust memory performance are also provided. Moreover, a thorough analysis of the neuromorphic properties of our prototypes is presented, including the implementation of short-term plasticity effects, such as paired-pulsed facilitation and paired-pulse depression, which are of great importance for the rehearsal procedures of neurons during the learning function as well as for the linear distribution of the conductance pattern during synaptic potentiation and depression tasks. Additionally, Hebbian spike-time-dependent-plasticity responses were also recorded.

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Section: Discussionmentioning

confidence: 99%

“…In the field of flexible resistive memories, many devices have been demonstrated on various flexible substrates. Most of them have been developed on polyimide (PI), − polyethylene terephthalate (PET), − and polyethylene naphthalate (PEN) …”

Section: Introductionmentioning

confidence: 99%

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Papakonstantinopoulos

Bousoulas

Tsigkourakos

et al. 2021

ACS Appl. Electron. Mater.

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“…In previous studies, transparent flexible memristors have been successfully fabricated on polymer substrates e.g. soft polydimethylsiloxane [19], colorless polyimide [20], polyethylene terephthalate [28] , [29] and polyethersulfone [30]. These substrates show the good mechanical flexibility compared to conventional substrates.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

et al. 2019

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Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, lightweight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80 % in visible light and high performance with a ON/OFF resistance ratio >10 5 , stable endurance to 10 3 cycles and long retention time of 10 5 s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 o C, which deliver a pathway for future applications in flexible transparent smart electronics.

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“…Owing to the characteristics of organic materials, including easy modification, large scalability, simple preparation method and so on, there is a growing demand for organic-based resistive switching memory, such as poly(4-vinylphenol) (PVP) [5] and polyvinyl alcohol (PVA) [6,7]. Metal oxides consisting of Al 2 O 3 [8], TiO 2 [9] and ZnO [10,11] have been widely studied as inorganic materials due to their simple structure, easy control of material composition and compatibility with CMOS technology. Two-dimensional (2D) materials such as graphene [12], MoS 2 [13,14], WS 2 [15] and h-BN [16] have gained great attention owing to their excellent electrical and mechanical characteristics.…”

Section: Introductionmentioning

confidence: 99%

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

et al. 2022

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Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability and low-cost fabrication technique. In this study, the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated. The result confirms that the optimal ratio of PVA:MoS2 is 4:1, which presents an excellent resistive switching behavior. Moreover, we propose a resistive switching model of Ag/ZnO/PVA:MoS2/ITO bilayer structure, which inserts the ZnO as the protective layer between the electrode and the composite film. Compared with the device without ZnO layer structure, the resistive switching performance of Ag/ZnO/PVA:MoS2/ITO was improved greatly. Furthermore, a large resistive memory window up to 104 was observed in the Ag/ZnO/PVA:MoS2/ITO device, which enhanced at least three orders of magnitude more than the Ag/PVA:MoS2/ITO device. The proposed nanostructured Ag/ZnO/PVA:MoS2/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.

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Transparent and Flexible Resistive Random Access Memory Based on Al₂O₃Film With Multilayer Electrodes

Cited by 31 publications

References 19 publications

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

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Transparent and Flexible Resistive Random Access Memory Based on Al2O3Film With Multilayer Electrodes

Cited by 31 publications

References 19 publications

Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

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Transparent and Flexible Resistive Random Access Memory Based on Al₂O₃Film With Multilayer Electrodes

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique

Highly Flexible Artificial Synapses from SiO₂-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique