1971
DOI: 10.1364/ao.10.002263
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Transmissivity and Absorption of Fused Quartz Between 022 μ and 35 μ from Room Temperature to 1500°C

Abstract: Transmissivities were measured and absorption coefficients derived for three types of fused quartz between room temperature and 1500 degrees C: GE uv Type 151 (0.21-2.0 mu), GE ir Type 105 (0.21-3.5 mu), and Corning Vycor ir glass No. 7905 (1.7-4.0 mu). Less extensive measurements were also performed with Corning uv Type 7940. The interval of virtual transparency (transmissivity greater, similar0.85) of each type between the ultraviolet and near-infrared was reduced by heating due to a shift in both the long-a… Show more

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Cited by 85 publications
(24 citation statements)
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“…Figure 2. Photon fluxes inside the reactor, as well as the transmittance of water and fused quartz (Beder et al, 1971). …”
Section: Temperature Control In the Reaction Sectionmentioning
confidence: 99%
“…Figure 2. Photon fluxes inside the reactor, as well as the transmittance of water and fused quartz (Beder et al, 1971). …”
Section: Temperature Control In the Reaction Sectionmentioning
confidence: 99%
“…In order to test the potential of the CNP as a method of fabrication of a 2D slab silicon photonic crystal TM polarizer, a hybrid mask mold with both a nanoscale imprinting mold and a micron-scale Cr photomask layer was made. Quartz was chosen as an imprinting mold material, since quartz substrate is known to be transparent over the 200~400 nm range of UV light and very rigid [17]. The multi-scale patterns of the photonic crystal device can be transferred to the silicon-on-insulator (SOI) sample substrate by UV exposure and imprinting, as shown in Figure 3. …”
Section: µMmentioning
confidence: 99%
“…Where appropriate I have obtained copyright permission from the copyright holder to reproduce material in this thesis. 9 Measured open circuit voltages (V oc ), short circuit currents (I sc ), and estimated power output (P max ) at the PV's maximum power point (MPP) using a known fill factor (FF) value of 0.7 [198] 6.10 Transmittance of quartz [190] and silicon (slightly doped, concentration of 10 16 cm −1 ) [197] at elevated temperatures (a) and blackbody spectral emissive power as a function of temperature (b), the dashed lines indicate the wavelength of 3.5 µm where quartz's transmittance is dramatically decreased at elevated temperatures, the external quantum efficiency of GaSb PV cells [198] A.7 A five-cell stencil for the 5th-order WENO reconstruction as described in original article [208] With the rapid development of nano/micro-manufacturing technologies, the miniaturisation of a variety of electronic and mechanical devices for the next generation has been drastically accelerated, for applications such as wireless equipment, micro-sensors and actuators, micro-space vehicles, and small-scale biomedical devices. However, the development of small-scale energy systems for powering those devices has fallen behind, especially when energy density and mass/volume become important criteria of evaluating the performance of the power system [1][2][3][4][5].…”
Section: Declaration By Authormentioning
confidence: 99%
“…Second, since the silicon wafer is partially transmissive in the PV convertible band (although the transmittance is decreased at elevated temperatures, as shown in Figure 6.10), radiation from the porous foams inside the combustor serves as a secondary mechanism for the TPV power output. [190] and silicon (slightly doped, concentration of 10 16 cm −1 ) [197] at elevated temperatures (a) and blackbody spectral emissive power as a function of temperature (b), the dashed lines indicate the wavelength of 3.5 µm where quartz's transmittance is dramatically decreased at elevated temperatures, the external quantum efficiency of GaSb PV cells [198] is also shown.…”
Section: Tpv Performancementioning
confidence: 99%
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