We present the characterization of the dielectric permittivity and loss tangent of germanium telluride (GeTe) and germanium antimonium telluride (Ge2Sb2Te5-GST) phase change thin-films (less than 1 μm thicknesses) in the millimeter-wave (mmW) domain. The dielectric permittivities in the amorphous (insulator) state of GeTe and GST were measured using two independent differential methods: a wide bandwidth characterization based on the measurement of the propagation constant of a coplanar waveguide and a single frequency characterization based on the measurement of the resonant frequency of a planar resonator. This differential approach allows us to extract the permittivity of the thin film without taking into consideration other parameters of the circuit like the conductivity and the thickness of the metals as well as the losses of the substrate and their permittivity. The extracted mean values range between are 20-22 for the GeTe and 30-34 for the GST. These values are rather constant over the frequency range from 10 GHz to 60 GHz. Additionally, the loss tangent at 30 GHz of both compositions was extracted giving values of 3.4x10 -2 and 3.2x10 -1 for the GeTe and GST, respectively. These values are among the first reported ones regarding the electromagnetic properties of GeTe and GST in this frequency band.