Transmission-Line Class-E Power Amplifier With Extended Maximum Operating Frequency

Thian, Mury; Fusco, Vincent

doi:10.1109/tcsii.2011.2124570

Cited by 23 publications

(18 citation statements)

References 16 publications

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“…For a prescribed output power (Pout) and supply voltage (VD). The maximum operating frequency (fmax) of the class-E PA is strictly constrained by the transistor output capacitance (Cout), as described by [21].…”

Section: Class-e Pa With Extended Fmaxmentioning

confidence: 99%

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Zeng

Huang

2019

IEICE Electron. Express

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This paper presents a method for designing high-efficiency concurrent dual-band (DB) class-E power amplifier (PA) that operate above the theoretical maximum frequency (fmax). The excess output capacitances at the two desired frequencies can be compensated using the proposed output matching network without separate design of harmonic compensation network, thus the fundamental and harmonic impedances for DB optimum class-E operation are achieved above the fmax, considering the parasitics of the packaged transistor. For demonstration, the fabricated DB class-E PA using GaN HEMT features the maximum power-added efficiency (PAE) of 74.1% and 72.6% at 1.9 and 2.5 GHz, while the output power is 40.3 and 40.7 dBm, respectively.

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Section: Class-e Pa With Extended Fmaxmentioning

confidence: 99%

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Zeng

Huang

2019

IEICE Electron. Express

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“…2(b) shows that as q increases, the value of ωC increases, meaning that for a specific value of C representing the intrinsic device output capacitance (C = C out ), f max increases with the increasing q. Thus, the f max of the Class-E PA with shunt capacitance and shunt filter can be expressed as in (2), where the dependency of k on q is shown in Fig. 2(b), from which it can be seen that for q = 1.6, k = 0.097, that is identical to (32) in [5], and 1.91 times higher than that in [1].…”

Section: Idealized Operation and Figures Of Meritmentioning

confidence: 99%

“…However, the maximum operating frequency (f max ) of this PA is strictly constrained by the transistor output capacitance, and its circuit bandwidth is dictated by the required loaded quality factor. To resolve this problem, several modified topologies have been proposed [2]- [4], including the recent high-efficiency Class-E PA with shunt capacitance and shunt filter shown in Fig. 1(a) [5]- [6].…”

Section: Introductionmentioning

confidence: 99%

Exploring the Design Flexibility of the Class-E Power Amplifier with Shunt Capacitance and Shunt Filter

Mugisho

Thian

Grebennikov³

et al. 2019

2019 IEEE Radio and Wireless Symposium (RWS)

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The Class-E power amplifier (PA) with shunt capacitance and shunt filter offers a unique design flexibility which can be exploited either to extend the maximum operating frequency of the PA or to allow the use of large active devices with high power handling capability. In this paper, a novel transmission-line load network is proposed to provide the drain of the active device with the required load impedances at the fundamental frequency as well as at even and odd harmonic frequencies. The concept is verified through simulations and measurements of a circuit prototype, which delivers a peak drain efficiency of 90.2%, a peak power-added efficiency of 82.7%, and a peak output power of 39.8 dBm at 1.37 GHz.

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“…There are two solution for realizing CMOS broadband PA. The first way is optimizing the performance of the matching network, which includes switched-capacitor PA [6,7], transformer-based PA [8,9] and transmission line PA [10,11]. But the value of the passive devices and the complexity of the matching network will be enhanced with the bandwidth expanding.…”

Section: Introductionmentioning

confidence: 99%

A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique

Ren

Zou

2020

IEICE Electron. Express

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The adaptive bias technique is the common technology for improving the power-added efficiency (PAE) of the power amplifier (PA). However, the performance of the adaptive bias technique is sensitive to the frequency variation. This paper presents a novel adaptive bias as the common-source bias of the 45-2500 MHz CMOS PA, which combines the subthreshold PD to decrease the effect on frequency of adaptive bias technique and a unity gain amplifier to increase the detection sensitivity, for improving the PAE at back-off mode over the wide bandwidth. The proposed PA provides a good performance from 45 MHz to 2500 MHz, while the peak of the saturation output power is 24.02 dBm over the frequency band. Moreover, the maximum PAE achieves 44.61 % at 500 MHz and the PAE is larger than 28.48 % at 3 dB back-off power. The chip size of the broadband PA achieves 1.87 mm 2 at TSMC 0.18 um technology process. It draws 200 mA from 3.3 V supply voltage.

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Transmission-Line Class-E Power Amplifier With Extended Maximum Operating Frequency

Cited by 23 publications

References 16 publications

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

High-efficiency concurrent dual-band class-E power amplifier with extended maximum operating frequency

Exploring the Design Flexibility of the Class-E Power Amplifier with Shunt Capacitance and Shunt Filter

A 45–2500 MHz high efficiency power amplifier with novel adaptive bias technique

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