Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure

Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0)

“…The reactions of germanium with Pt have been studied [1,[4][5][6][7][8], while with Ni have been reported by [4,5,[9][10][11][12][13][14][15] and with Ti have been investigated [5,16]. The study of the solid state reaction between thin metal films and germanium to determine the phase formation sequence [1,[4][5][6][10][11][12][13]15], microstructure of the material [4,5,7,16], growth kinetics [10,15] and electrical characteristics were analyzed by x-ray diffraction [1,[4][5][6][10][11][12][13]15,16], Rutherford Backscattering spectroscopy [1], transmission electron microscopy [4,7,10], differential scanning calorimetry [7,10] and current-...…”

“…The study of the solid state reaction between thin metal films and germanium to determine the phase formation sequence [1,[4][5][6][10][11][12][13]15], microstructure of the material [4,5,7,16], growth kinetics [10,15] and electrical characteristics were analyzed by x-ray diffraction [1,[4][5][6][10][11][12][13]15,16], Rutherford Backscattering spectroscopy [1], transmission electron microscopy [4,7,10], differential scanning calorimetry [7,10] and current-voltage (I-V) [4,6,11,12,14,16], techniques. Yao et al [4] studied the I-V characteristics of Pt/n-Ge (0 0 1) and Ni/n-Ge (0 0 1) after subjecting the Schottky contacts to rapid thermal anneal (RTA) in N 2 ambient at 250-700 • C for 20 s. Gumeniuk et al [6] have reported the superconductivity in Pt germanides of new skutterditelike compounds MPt 4 Ge 12 .…”

“…Yao et al [4] studied the I-V characteristics of Pt/n-Ge (0 0 1) and Ni/n-Ge (0 0 1) after subjecting the Schottky contacts to rapid thermal anneal (RTA) in N 2 ambient at 250-700 • C for 20 s. Gumeniuk et al [6] have reported the superconductivity in Pt germanides of new skutterditelike compounds MPt 4 Ge 12 . Łaszcz et al [7] studied the mechanisms of the Pt germanide formation by RTA processes in the Ge/Pt/Ge/SiO 2 structure at 200-600 • C range. Their results depict that, during annealing of the Ge/Pt/Ge/SiO 2 structure at 200 • C the whole Pt layer had reacted with a part of the Ge layer and after 300 • C anneal the whole Ge reacted with Pt.…”