Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates

Zhou, Wei; Ren, Dawei; Dapkus, P. D.

doi:10.1016/j.jcrysgro.2005.12.108

Cited by 11 publications

(6 citation statements)

References 17 publications

(17 reference statements)

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“…During the second step LEO, on the contrary, the growth rate of f1 12 2g facets will be increased much relative to that of the (0 0 0 1) facet, until a smooth coalescence is achieved [20]. The detailed procedures for twostep LEO were presented elsewhere [24].…”

Section: Methodsmentioning

confidence: 99%

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Zhou

Ren

Dapkus

2005

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Zhou

Ren

Dapkus

2005

Journal of Crystal Growth

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“…These TDs could provide leakage pathways for electron-hole pairs to pass through active region [7]. In addition, as compared with the device B, better crystalline quality of the device C might be attributed the higher roughness of nanocomb-shaped PSS, which could result in more bending and annihilation of TDs [24]. Thus, the presence of TDs could be suppressed more validly.…”

Section: B Steady-state Of Pore Growthmentioning

confidence: 99%

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Liou

Chen

Chou

et al. 2014

IEEE J. Quantum Electron.

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A GaN-based light-emitting diode (LED) grown on a nanocomb-shaped patterned sapphire substrate (PSS) is fabricated and studied. Nanocomb-shaped patterns are transferred on a sapphire substrate using a well-ordered anodized aluminum oxide (AAO) thin film as a mask for the inductively coupled plasma etching process. This well-ordered AAO thin film with a high aspect ratio is grown on a sapphire substrate by an oxalic acid-based electrochemical system and a threestep anodization. The strain state generated during epitaxial growth could be effectively alleviated by the use of nanocombshaped PSS. The treading dislocation density could be reduced. Thus, the enhanced crystalline quality is obtained. In addition, due to the presence of photonic crystal-like air buffer layer, part of reflected photons upward the top side could be scattered by this layer. Therefore, more photons could be extracted outside. Experimentally, at 20 mA, as compared with a conventional LED grown on a planar sapphire substrate, the studied LED grown on a nanocomb-shaped PSS shows 53.8% and 43.7% enhancements in light output power and external quantum efficiency as well as a reduced leakage current.

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“…Non‐polar and semi‐polar GaN can be grown on large and cost effective foreign substrates but usually these films suffer from high density of dislocations . Micron scale structures grown by selective area growth (SAG) on c ‐plane GaN have facets that correspond to some low index semi‐polar and non‐polar surface planes, but they suffer from threading dislocations penetrating from the selective area growth window regions to the surface, thereby degrading the crystal quality . A recent study on nanostructures grown by SAG exhibit highly efficient dislocation filtering mechanisms .…”

Section: Introductionmentioning

confidence: 99%

Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs

Nakajima

Lin

Dapkus

2016

Physica Status Solidi (a)

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Efficient green emitting LEDs and monolithic white light emitting LEDs require the extension of the range of efficient light emission in the GaN/InGaN materials system. We demonstrate high efficiency green and yellow light emitting multiple quantum well (MQW) structures grown on GaN nanostripe templates. The structures show promise for realizing high efficiency phosphor -free white LEDs. The nanostripe dimensions range from 100 to 300 nm and have separations that range from 300 nm to 1 mm. The MOCVD growth conditions strongly affect surfaces expressed in the GaN nanostripes whose sidewalls can be controlled to be nearly vertical or inclined and intersecting. Single quantum well (QW) structures are grown on these different stripes. Photoluminescence (PL) measurement shows that QW grown on stripes with the {10À11} surfaces and triangular shape emit the longest peak wavelength and highly efficient PL emission peak wavelengths as long as 570 nm are realized. PL and electroluminescence (EL) spectra show narrow linewidth that is comparable to the planar case and CL studies further demonstrate the uniform emission wavelength along the sidewalls of the structures. Finally, we have grown and fabricated green emitting LEDs on {10À11} faceted nanostripes with promising device characteristics.

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Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates

Cited by 11 publications

References 17 publications

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs

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