Transmission electron microscopy studies of nanostructured TiO2 films on various substrates

Djerdj, Igor; Tonejc, Antun; Bijelić, Mirjana; Turković, Aleksandra

doi:10.1016/j.vacuum.2005.06.015

Cited by 27 publications

(21 citation statements)

References 21 publications

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“…17 The TiO 2 films are produced by several methods such as hydrothermal, sol-gel, and by a variety of thin film deposition techniques. 13,18 Among the latest techniques reactive evaporation, 19 magnetron sputtering, [20][21][22][23] chemical vapor deposition, 24 and ion beam enhanced deposition, 25 are the most common routes used for preparing uniform coatings, whereas solution pathways are preferred for catalysts applications, where large areas are required. Also, it is well established that the physical properties of TiO 2 films strongly depend on the oxygen content.…”

Section: Introductionmentioning

confidence: 99%

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Marchi

Bilmes

Ribeiro³

et al. 2010

Journal of Applied Physics

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Articles you may be interested inA comprehensive study of nonstoichiometry titanium oxide thin films ͑TiO x , 0.3Յ x Յ 2͒ prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO 2 particles during coalescence.

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Section: Introductionmentioning

confidence: 99%

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Marchi

Bilmes

Ribeiro³

et al. 2010

Journal of Applied Physics

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show abstract

“…Djerdja et al [5] reported nanocrystalline TiO 2 films by CVD on different substrates at relatively low temperature of 320 8C using TiCl 4 as a precursor and found that the nature of substrates influence the size and distribution of nanograins in the films. Byun et al prepared TiO 2 thin films at 287-362 8C using titanium(IV) tetraisopropoxide (TTIP) precursor and O 2 gas [6].…”

Section: Introductionmentioning

confidence: 99%

Properties of chemical vapour deposited nanocrystalline TiO2 thin films and their use in dye-sensitized solar cells

Shinde

Bhosale

2008

Journal of Analytical and Applied Pyrolysis

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“…There are many reports on the CVD and ALD of TiO 2 films on a variety of substrates owing to its viable features in various applications, all of which cannot be referred in this article. The films can be grown with amorphous34, 35 or crystalline structures (brookite,36 anatase,37, 38 and rutile39, 40) depending on the processing conditions (most importantly the growth temperature) and precursors. However, the stringent requirement of the very conformal deposition over the extreme 3D structure of a DRAM capacitor obviously prefers the film being grown by ALD.…”

Section: Resultsmentioning

confidence: 99%

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Kim

Lee

Han

et al. 2010

Adv Funct Materials

207

144

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The recent progress in the metal‐insulator‐metal (MIM) capacitor technology is reviewed in terms of the materials and processes mostly for dynamic random access memory (DRAM) applications. As TiN/ZrO2‐Al2O3‐ZrO2/TiN (ZAZ) type DRAM capacitors approach their technical limits, there has been renewed interest in the perovskite SrTiO3, which has a dielectric constant of >100, even at a thickness ∼10 nm. However, there are many technical challenges to overcome before this type of MIM capacitor can be used in mass‐production compatible processes despite the large advancements in atomic layer deposition (ALD) technology over the past decade. In the mean time, rutile structure TiO2 and Al‐doped TiO2 films might find space to fill the gap between ZAZ and SrTiO3 MIM capacitors due to their exceptionally high dielectric constant among binary oxides. Achieving a uniform and dense rutile structure is the key technology for the TiO2‐based dielectrics, which depends on having a dense, uniform and smooth RuO2 layer as bottom electrode. Although the Ru (and RuO2) layers grown by ALD using metal‐organic precursors are promising, recent technological breakthroughs using the RuO4 precursor made a thin, uniform, and denser Ru and RuO2 layer on a TiN electrode. A minimum equivalent oxide thickness as small as 0.45 nm with a low enough leakage current was confirmed, even in laboratory scale experiments. The bulk dielectric constant of ALD SrTiO3 films, grown at 370 °C, was ∼150 even with thicknesses ≤15 nm. The recent development of novel group II precursors made it possible to increase the growth rate largely while leaving the electrical properties of the ALD SrTiO3 film intact. This is an important advancement toward the commercial applications of these MIM capacitors to DRAM as well as to other fields, where an extremely high capacitor density and three‐dimensional structures are necessary.

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Transmission electron microscopy studies of nanostructured TiO2 films on various substrates

Cited by 27 publications

References 21 publications

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition

Properties of chemical vapour deposited nanocrystalline TiO2 thin films and their use in dye-sensitized solar cells

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

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