Transmission Electron Microscopic Observation of AlN/α-Al<sub>2</sub>O<sub>3</sub> Heteroepitaxial Interface with Initial-Nitriding AlN Layer

Masu, Kazuya; Nakamura, Yukinori; Yamazaki, Tsuyoshi; Shibata, Tomohiko; Takahashi, Michio; Tsubouchi, Kazuo

doi:10.1143/jjap.34.l760

Cited by 40 publications

(20 citation statements)

References 8 publications

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“…In the case of (OO.1)A1N grown on (OO•l) sapphire substrate, the EADM shows smallest value between eight time N-N distances of epilayer and nine times 0-0 distances of the substrate from the growth model. This model has confirmed by transmission electron microscopic observation ofthe cross-sections reported by Masu et al(1995). 9 It was revealed that strain of epilayer has reduced by edge-type dislocations and EADM would suggest and appear the possibility of the epitaxial growth.…”

Section: Introductionsupporting

confidence: 65%

<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

Ohsato

Razeghi²

1997

SPIE Proceedings

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We have been presented crystallographic growth models of GaN thin films on the a -A1203 substrates based on the crystal chemistry: electoronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the some aspects of epitaxial growth.

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Section: Introductionsupporting

confidence: 65%

<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

Ohsato

Razeghi²

1997

SPIE Proceedings

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“…Over the years, GaN with different orientations have been shown practically by all growth techniques, HVPE [7,15], metalorganic vapor phase epitaxy (MOVPE) [9,10,14,[17][18][19][22][23][24][25][26], MBE [8,11,12,20,21,27]. For more than 20 years, all the publications consistently reported that the nitride growth in directions different from the [0001] one is more difficult.…”

Section: The Initial Results On Nitrides Grown With Off-c-axis Orientmentioning

confidence: 99%

“…Although the first realizations of AlN with nonpolar (1120) surface [8,22,23,25,26] and (1100) surface [24] were reported before 2000, a systematic study of nonpolar AlN-based materials, aiming at the development of AlN/AlGaN heterostructures for device applications started at Kyoto University in 2002 [32,33]. By using both 6H and 4H-SiC substrates, both a-and m-plane structures have been brought into the focus of further research.…”

Section: The Beginning Of the Nonpolar Nitridesmentioning

confidence: 99%

Development and prospects of nitride materials and devices with nonpolar surfaces

Paskova

2008

Physica Status Solidi (b)

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IntroductionThe commercial fabrication of lightemitting diodes (LED) and laser diodes (LD) from the ultraviolet to the amber, as well as the development of highpower high electron mobility transistors (HEMT) suitable for numerous telecom applications have been driven by the tremendous improvement in the nitride materials quality. Despite remarkable achievements during the last decade, however, the device performance is hampered by the presence of strong spontaneous and piezoelectric polarization fields along the typical [0001] growth direction in the wurtzite nitride materials [1]. As a consequence of these strong internal fields, the quantum wells (QW), typically used in the active region of optical emitter devices, have a triangular potential profile and the oscillator strength for optical transitions is reduced by several orders of magnitude, depending on the QW thickness [2,3]. A similar deterioration effect is observed in the nitride-based HEMT devices due to a polarization-generated charge. A typical AlGaN/GaN HEMT built in the [0001] growth direction experiences a channel charge of more than 1 × 10 13 cm

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“…[4][5][6] High quality GaN can also be obtained by nitridation of a substrate with ammonia before the film growth. [7][8][9][10] In both cases, there seems to be optimum growing conditions where two-dimensional (2-D) nucleation and lateral growth is enhanced for the best crystal quality. The process window to get the best film is generally reported to be a function of temperature and time for a given deposition system.…”

Section: Introductionmentioning

confidence: 99%

The effect of substrate surface roughness on GaN growth using MOCVD process

Kum

Byun

1997

Journal of Elec Materi

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Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal, and reduction of defect density is accomplished by a proper choice of substrate or a deliberate modification of the substrate surface. Buffer growth or nitridation can yield an atomically flat surface and the roughness of a substrate surface for GaN deposition can be controlled by either method such that lateral film growth can be promoted. The effect of nanoscale surface roughness on photoluminescence and crystal quality of GaN/Al 2 O 3 (0001) has been studied. The optimal conditions for N 2 -nitridation or/and GaN-buffer growth correlate well with the minimum surface roughness and surface morphology as determined by atomic force microscopy and it is suggested that this can be used for process optimization of GaN film growth.

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Transmission Electron Microscopic Observation of AlN/α-Al₂O₃ Heteroepitaxial Interface with Initial-Nitriding AlN Layer

Cited by 40 publications

References 8 publications

<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

Development and prospects of nitride materials and devices with nonpolar surfaces

The effect of substrate surface roughness on GaN growth using MOCVD process

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Transmission Electron Microscopic Observation of AlN/α-Al2O3 Heteroepitaxial Interface with Initial-Nitriding AlN Layer

Cited by 40 publications

References 8 publications

<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

<title>Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates</title>

Development and prospects of nitride materials and devices with nonpolar surfaces

The effect of substrate surface roughness on GaN growth using MOCVD process

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Product

Resources

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Transmission Electron Microscopic Observation of AlN/α-Al₂O₃ Heteroepitaxial Interface with Initial-Nitriding AlN Layer