1999
DOI: 10.1002/(sici)1521-4079(199911)34:9<1221::aid-crat1221>3.0.co;2-u
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Transmission Electron Microscope Study of Secondary Phases in Cr3+:LiCaAlF6 Single Crystals

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Cited by 5 publications
(3 citation statements)
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“…Especially, the Cr:LiCAF crystal that was used in this study was from a very early growth with relatively high losses (~> 1% per cm). This high level of passive loss in Cr:LiCAF was caused mostly by micron-sized or smaller precipitates arising during the growth process [45][46][47] and it is now possible to grow Cr:LiCAF crystals with passive losses below 0.2% per cm [48]. We also note that, despite the high loss Cr:LiCAF crystal that was available in this study, the slope efficiencies obtained with the tapered diode pumped system (41%), is much higher than what can be obtained (19%) while pumping with broad-stripe single-emitter diodes [31].…”
Section: Results Of Continuous-wave Lasing Experimentsmentioning
confidence: 56%
“…Especially, the Cr:LiCAF crystal that was used in this study was from a very early growth with relatively high losses (~> 1% per cm). This high level of passive loss in Cr:LiCAF was caused mostly by micron-sized or smaller precipitates arising during the growth process [45][46][47] and it is now possible to grow Cr:LiCAF crystals with passive losses below 0.2% per cm [48]. We also note that, despite the high loss Cr:LiCAF crystal that was available in this study, the slope efficiencies obtained with the tapered diode pumped system (41%), is much higher than what can be obtained (19%) while pumping with broad-stripe single-emitter diodes [31].…”
Section: Results Of Continuous-wave Lasing Experimentsmentioning
confidence: 56%
“…However, initially, it did not draw much attention, mostly due to the high level of parasitic losses (∼2% per cm) observed in Cr:LiCAF during the early years of its production (for Cr:LiSAF passive losses have been around ∼0.2% per cm) [34][35][36][37][38]. This high level of passive losses in Cr:LiCAF rooted mostly from micrometer-sized or smaller precipitates arising during the growth process [35,36], which obstructed efficient laser operation in this low-gain medium.…”
Section: Introductionmentioning
confidence: 99%
“…However, initially, it did not draw much attention, mostly due to the high level of parasitic losses (∼2% per cm) observed in Cr:LiCAF during the early years of its production (for Cr:LiSAF passive losses have been around ∼0.2% per cm) [34][35][36][37][38]. This high level of passive losses in Cr:LiCAF rooted mostly from micrometer-sized or smaller precipitates arising during the growth process [35,36], which obstructed efficient laser operation in this low-gain medium. On the other hand, compared to Cr:LiSAF, Cr:LiCAF has several advantages, including a higher intrinsic slope efficiency [39], a higher thermal conductivity [39], a higher thermal quenching temperature [40], a lower thermal lensing [41], a lower quantum defect, a lower excited-state absorption [9,10], and a lower upconversion rate [42].…”
Section: Introductionmentioning
confidence: 99%