Transmission electron microscope radiation damage of 4H and 6H SiC studied by photoluminescence spectroscopy

Steeds, John W; Evans, G. R.; Danks, LR; Furkert, S.A.; Voegeli, Wolfgang; Ismail, M.Y.A.; Carosella, Francesca

doi:10.1016/s0925-9635(02)00212-1

Cited by 77 publications

(56 citation statements)

References 23 publications

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“…Similar values have been observed in 4H-SiC, revealing 25 eV for Si and 21 eV for C (Ref. [22]). Assuming that these values also approximately account for Al and N, respectively, one can expect that both host atoms are displaced.…”

Section: Recombination Mechanism Of the Vl A Bandsupporting

confidence: 87%

Ultraviolet luminescence in AlN

Schulz

Albrecht

Irmscher

et al. 2011

Physica Status Solidi (b)

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The defect related luminescence in the near UV region between 3 and 4 eV has been investigated in insulating, n-type and irradiation damaged AlN. A single luminescence band around 3.3 eV with a full width at half maximum of more than 500 meV, is attributed to a donor-acceptor pair transition at low temperatures. The substantial linewidth and a Stokes shift of around 1.3 eV result from strong electron-phonon coupling of the deep acceptor. While the chemical nature of the donor remains ambiguous, the acceptor species is attributed to the isolated Al vacancy, i.e. V 3ÀAl . This luminescence band might be interesting for studying n-type compensation mechanisms in AlN.

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Section: Recombination Mechanism Of the Vl A Bandsupporting

confidence: 87%

Ultraviolet luminescence in AlN

Schulz

Albrecht

Irmscher

et al. 2011

Physica Status Solidi (b)

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“…Hence a major effort had to be put into the deconvolution of the observed spectra. As described in detail in [13] and [18] it was possible to unambiguously assign the phonon replicas to a specific zero phonon line (ZPL) employing three different techniques. One method was by spatial separation: spectra were obtained at a series of points along lines through the irradiated region.…”

Section: Experimental Approach To Carbon Aggregatesmentioning

confidence: 99%

Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches

Bockstedte

Gali

Mattausch

et al. 2008

Physica Status Solidi (b)

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In SiC, mobile point defects may form thermally stable clusters and aggregates, such as di‐vacancies or carbon interstitial complexes. Although predicted by theory, experimental evidence of such clusters became available only recently. Combining theoretical and experimental approaches, the unique identification of the di‐vacancy, the carbon vacancy‐antisite complex with the spin resonance centers P6/P7 and SI5 was recently achieved. In this way also the di‐carbon and tri‐carbon antisites with the photoluminiscence centers P–T and U, HT3 and HT4, respectively were identified. The two identified vacancy complexes show distinct properties: while the di‐vacancy, like the silicon vacancy possesses a high‐spin ground state, the carbon vacancy–antisite complex, like the carbon vacancy, is a Jahn–Teller center. These effects consistently explain the complex properties of the spin resonance spectra and are discussed in detail for the isolated vacancies. The aggregation of vacancies proved to be relevant in the explantation of the kinetic deactivation of nitrogen in co‐implanted SiC. This and further evidence for defect aggregates underline the relevance of this notion. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For 6H-SiC this value is still in debate, as recent experimental studies have given very different results. Steeds et al [3] found a value close to 19 eV using the electron beam of a transmission electron microscope associated with the photoluminescence technique to characterize the generated point defects, while Rempel et al [4], using a Van de Graaff accelerator and positron annihilation techniques, proposed that it is higher than 30 eV.…”

Section: Introductionmentioning

confidence: 99%