Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide

Kerbiriou, X.; Barthe, M.F.; Esnouf, S.; Desgardin, P.; Blondiaux, G.; Petite, G.

doi:10.1016/j.jnucmat.2007.01.023

Cited by 17 publications

(7 citation statements)

References 12 publications

(16 reference statements)

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“…It has been irradiated at UFRGS in Brazil with 20 MeV Au 6+ ions, with a fluence of 10 14 cm –2 . Implantation depth profile has been calculated with the SRIM software using the displacement energies determined by Kerbiriou et al . for the silicon sublattice and by Chen et al .…”

Section: Methodsmentioning

confidence: 99%

“…Au‐implantation and dpa depth profiles in the SiC calculated using the SRIM software with Ed(Si) = 19 eV and Ed(C) = 20 eV . The stars represent the mean dpa integrated by the probing Raman beam during a measurement, i.e.…”

Section: Methodsmentioning

confidence: 99%

“…The damage calculated by using full detailed calculations of the SRIM program varies between 0.15 to 0.3 atomic displacements per atom (dpa), depending on the depth. This concept of dpa is usually used to quantify the irradiation‐induced damage dose.…”

Section: Methodsmentioning

confidence: 99%

“…These conditions have enabled to obtain a clean depth profile of the damage induced in SiC showing its heterogeneity. The physical interpretation of this heterogeneity will be discussed in the light of SRIM calculations and spectral decomposition.…”

Section: Introductionmentioning

confidence: 99%

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Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Linez¹,

Canizarès²,

Gentils³

et al. 2012

J Raman Spectroscopy

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Linez¹,

Canizarès²,

Gentils³

et al. 2012

J Raman Spectroscopy

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“…Finally, we compare our results with the experimental data available in literature. In n-doped, irradiated 3C-SiC a signal varying with temperature from 210 ps up to 220 ps was detected by Kerbiriou et al 56 The authors concluded that the lifetimes were coming from at least two vacancy-type defects: V Si and V C + V Si . This identification, however, was based on the calculation results by Brauer et al, 15,16 which did not take into account the effect of the defect relaxation or its charge state.…”

Section: Comparison With Experimentsmentioning

confidence: 96%

Electronic structure investigation of energetics and positron lifetimes of fully relaxed monovacancies with various charge states in 3C-SiC and 6H-SiC

et al. 2013

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We present first-principles calculations of formation energies of various charge states of V C , V Si , and V C + C Si defects in 3C and 6H silicon carbide to predict if they can be detected by positron annihilation spectroscopy (PAS). We use the two-component density functional theory to compute positron lifetimes in both polytypes, taking into account atomic relaxation due to both the defect and the positron. Three different calculation schemes are used. We find longer lifetimes than the ones obtained in previous theoretical studies in which relaxation was not taken into account or was only estimated. For the neutral carbon vacancy, we find lifetimes from 173 ps in 6H-SiC to 195 ps in 3C-SiC, while for the silicon vacancy, we obtain lifetimes from 222 to 227 ps in both polytypes, depending on the charge state. Based on these results, we propose that some experimental positron lifetimes assigned to V Si could in fact be related to defects containing V C. In consequence, the experimental data interpretation and defect identification should be probably reconsidered.

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Charged Particle Activation Analysis: Applications

Erramli

Bounagui

2017

Encyclopedia of Analytical Chemistry

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Radioactivation methods in general are essential for trace analysis because of their accuracy; among these methods, charged particle activation analysis (CPAA) is especially suitable for the determination of light elements such as boron, carbon, nitrogen, and oxygen at trace levels in materials. CPAA can also be used advantageously for other heavier elements, if needed, and sometimes be a complement to neutron activation analysis, or even competes with it. The CPAA is the best reference method because of its high sensitivity and selectivity. It permits the determination of the total concentration, regardless of the chemical state. The surface contamination can be eliminated by etching after irradiation, and absolute concentrations can be obtained by direct comparison with known compounds. There are no matrix effects and no need for reference samples. In this article, we have described and discussed, in more detail, the principle and some applications of CPAA. Examples are given of typical applications of CPAA technique such as the study of the oxygen profiling in Czochralski‐silicon (Cz‐Si) substrates submitted to a rapid thermal annealing (RTA) and the study of the oxygen behavior in thermally treated Cz‐Si by combining CPAA with ion channeling. Helium behavior in irradiated UO 2 is an important role in the mechanical stability of nuclear fuels during and after its use in nuclear power plants. Helium migration mechanisms in bulk uranium dioxide (UO 2 ) have already been the subject of theoretical studies, but there is a lack of experimental data relating to the most stable location in the crystal. The question of the helium behavior in silicon carbide 6H–SiC single crystals has been studied at the atomic scale by numerical simulations, but no experiment has been carried out to assess the results hitherto. The measurements have shown that a portion of the He is located in the interstitial tetrahedral sites as predicted by the numerical simulations.

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Silicon displacement threshold energy determined by electron paramagnetic resonance and positron annihilation spectroscopy in cubic and hexagonal polytypes of silicon carbide

Cited by 17 publications

References 12 publications

Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Determination of the disorder profile in an ion‐implanted silicon carbide single crystal by Raman spectroscopy

Electronic structure investigation of energetics and positron lifetimes of fully relaxed monovacancies with various charge states in 3C-SiC and 6H-SiC

Charged Particle Activation Analysis: Applications

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