Transitioning of direct e-beam write technology from research and development into production flow

Pain, Laurent; Icard, B.; Manakli, S.; Todeschini, J.; Minghetti, Blandine; Wang, V.; Henry, Daniel

doi:10.1016/j.mee.2006.01.093

Cited by 16 publications

(7 citation statements)

References 6 publications

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“…However, as wavelengths decrease, optical lithography begins to suffer from difficulties associated with shallow focus length and materials (including lenses, masks and resists) to do with dispersion relationships. Therefore, non-optical lithographic techniques such as electron-beam direct write (L. Pain et al, 2006), electron-beam projection (J. Yamamoto et al, 2000), ion-beam projection (Y.…”

Section: Introductionmentioning

confidence: 99%

High-energy Electron Beam Lithography for Nanoscale Fabrication

Wu¹,

Makiuchi²,

Chen³

2010

Lithography

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Section: Introductionmentioning

confidence: 99%

High-energy Electron Beam Lithography for Nanoscale Fabrication

Wu¹,

Makiuchi²,

Chen³

2010

Lithography

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“…Consequently, there is currently pronounced interest in the realization of fully industry-compatible ML2 tools, especially in the field of fast prototyping and low volume chip production. 1 It is predicted, however, that ML2 will have the lowest cost of ownership of all lithographic techniques at the 32nm-hp node and beyond if it can achieve a throughput of 15 wafers (300mm) per hour. 2 Projection Mask-Less Lithography (PML2) 3 is the multibeam maskless solution developed by IMS Nanofabrication and is based on its "charged particle large field projection optics" technology.…”

Section: Introductionmentioning

confidence: 99%

PML2: the maskless multibeam solution for the 22nm node and beyond

Klein

Platzgummer

Klikovits

et al. 2009

Alternative Lithographic Technologies

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Projection Mask-Less Lithography (PML2) is a potentially cost-effective multi electron-beam solution for the 22 nm half-pitch node and beyond. PML2 is targeted on using hundreds of thousands of individually addressable electron-beams working in parallel, thereby pushing the potential throughput into the wafers per hour regime. With resolution potential of < 10 nm, PML2 is designed to meet the requirements of several upcoming tool generations.

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“…Currently, the most urgent needs for EBDW arise in the field of fast prototyping of novel devices and low volume-chip production. 1,2) Although electron beams (EBs) have higher resolution than optical lithography, it is difficult to achieve both high throughput and high resolution at the same time. Many studies 3) have been conducted to overcome the conflict between high throughput and high resolution, but no study has yet demonstrated a viable production-worthy solution.…”

Section: Introductionmentioning

confidence: 99%

Development of Multibeam Electron Beam Direct Writing System Using Third-Order Imaging Technique

Fuse¹,

Kotsugi²,

Takeya³

et al. 2009

jjap

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We report the development of a new electron beam direct writing (EBDW) system embodying a concept that can realize both high throughput and fine resolution. The equipment has a multicolumn system with the third-order imaging technology, which obtains steep edge acuity with high current density as compared with conventional shaped beam methods. We attempt to apply this to via/contact layers, for which it is difficult to obtain resist patterns using any optical lithography systems. We also showed proof of concept of third-order imaging serving as a technique for simultaneously satisfying improvement in current density without beam blur and forming a beam to a desired shape. The advantage of the third-order imaging technique is a potential solution that may break through the technological impasse of high current density versus high resolution. We are currently engaged in enhancing the high-acceleration-energy and multicolumn system and in its development for mass production.

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Transitioning of direct e-beam write technology from research and development into production flow

Cited by 16 publications

References 6 publications

High-energy Electron Beam Lithography for Nanoscale Fabrication

High-energy Electron Beam Lithography for Nanoscale Fabrication

PML2: the maskless multibeam solution for the 22nm node and beyond

Development of Multibeam Electron Beam Direct Writing System Using Third-Order Imaging Technique

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