Transition Metal–MoS2 Reactions: Review and Thermodynamic Predictions

Domask, Anna C.; Gurunathan, Ramya; Mohney, Suzanne E.

doi:10.1007/s11664-015-3956-5

Cited by 35 publications

(28 citation statements)

References 139 publications

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“…Prior work indicates that the formation of new compounds are thermodynamically favored to occur at room temperature in many early transition metal−MoS 2 systems. 2 However, a purely thermodynamical view ignores the equally important role that kinetics plays in real systems. Therefore, experimentation is necessary to determine whether transition metals react with MoS 2 at moderate temperatures and times typically used in device processing and packaging and to reveal other features of these heterostructures.…”

Section: ■ Introductionmentioning

confidence: 99%

“…There are a few possible results when a TMD and metal are placed into contact: they can react to form new compounds, metal atoms can substitute on the Mo or S lattices, metal atoms can intercalate between the layers of the TMD, or the two materials can have an atomically abrupt interface. Prior work indicates that the formation of new compounds are thermodynamically favored to occur at room temperature in many early transition metal–MoS 2 systems . However, a purely thermodynamical view ignores the equally important role that kinetics plays in real systems.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide

Domask

Cooley

Kabius³

et al. 2018

Crystal Growth & Design

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Transmission electron microscopy, in particular selected area electron diffraction, was used to investigate the orientational relationship of Al, Ag, Cu, Mn, Mo, Ni, Pd, Ru, Re, and Zn deposited via physical vapor deposition on MoS 2 at room temperature. Past work has shown that a few facecentered cubic (FCC) metals (Ag, Au, Pb, Pd, and Pt) could be deposited epitaxially on MoS 2 . However, we found that additional FCC metals (Al and Cu) could be deposited epitaxially at room temperature on MoS 2 with the orientational relationship M(111)∥MoS 2 (0001) and M[22̅ 0]∥MoS 2 [112̅ 0], while a hexagonally close-packed (HCP) metal Zn was epitaxial on MoS 2 with a M(0001)∥MoS 2 (0001) and M[112̅ 0]∥MoS 2 [112̅ 0] relationship. However, the FCC metal Ni, body-centered cubic metal Mo, and HCP metals Re and Ru were not epitaxial on deposition or even after annealing at 673 K for 4 h. By comparing the results with both physical constants and modeling of the metal/MoS 2 systems, we observed that metals with a close-packed plane with six-fold symmetry, a high homologous temperature, and a low barrier to surface diffusion on MoS 2 are more likely to grow epitaxially at room temperature on MoS 2 .

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide

Domask

Cooley

Kabius³

et al. 2018

Crystal Growth & Design

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“…A recent review by Domask et al [70] focuses on thermodynamic predictions of transition metal-MoS 2 interface reactions. The key prediction is that many metals will react with MoS 2 .…”

Section: Interface Chemistrymentioning

confidence: 99%

Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability

Freedy

McDonnell

2020

Materials

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In this review on contacts with MoS2, we consider reports on both interface chemistry and device characteristics. We show that there is considerable disagreement between reported properties, at least some of which may be explained by variability in the properties of geological MoS2. Furthermore, we highlight that while early experiments using photoemission to study the interface behavior of metal-MoS2 showed a lack of Fermi-level pinning, device measurements repeatedly confirm that the interface is indeed pinned. Here we suggest that a parallel conduction mechanism enabled by metallic defects in the MoS2 materials may explain both results. We note that processing conditions during metal depositions on MoS2 can play a critical role in the interface chemistry, with differences between high vacuum and ultra-high vacuum being particularly important for low work function metals. This can be used to engineer the interfaces by using thin metal-oxide interlayers to protect the MoS2 from reactions with the metals. We also report on the changes in the interfaces that can occur at high temperature which include enhanced reactions between Ti or Cr and MoS2, diffusion of Ag into MoS2, and delamination of Fe. What is clear is that there is a dearth of experimental work that investigates both the interface chemistry and device properties in parallel.

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“…However, upon annealing, electric doping, and by controlling strains, 2H-MoS 2 can be transformed to 1T and 3R phases [ 36 ]. Due to the unique 2D structures, MoS 2 nanomaterials possess extraordinary electronic, optical, mechanical, and thermal properties, and this made it gain popularity in applications such as lubricants, catalysis, sensing, photoluminescence, and optics [ 37 – 40 ].…”

Section: Brief Fundamental Of Molybdenum Disulphidementioning

confidence: 99%

Instrumental Techniques for Characterization of Molybdenum Disulphide Nanostructures

Ramohlola

Iwuoha

Hato

et al. 2020

Journal of Analytical Methods in Chemistry

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The excellent chemical and physical properties of materials (nanomaterials) with dimensions of less than 100 nm (nanometers) resulted in researchers and industrialists to have great interest in their discovery and applications in various systems/applications. As their sizes are reduced to nanoscale, these nanomaterials tend to possess exceptional properties differing from those of their bulk counterparts; hence, they have found applications in electronics and medicines. In order to apply them in those applications, there is a need to synthesise these nanomaterials and study their structural, optical, and electrochemical properties. Among several nanomaterials, molybdenum disulphide (MoS2) has received a great interest in energy applications due to its exceptional properties such as stability, conductivity, and catalytic activities. Hence, the great challenge lies in finding the state-of-the-art characterization techniques to reveal the different properties of MoS2 nanostructures with great accuracy. In this regard, there is a need to study and employ several techniques to accurately study the surface chemistry and physics of the MoS2 nanostructures. Hence, this review will comprehensively discuss a detailed literature survey on analytical techniques that can be used to study the chemical, physical, and surface properties of MoS2 nanostructures, namely, ultraviolet-visible spectroscopy (UV-vis), photoluminescence spectroscopy (PL), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, time-of-flight secondary ion mass spectroscopy (TOF-SIMS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning and transmission electron microscopies (SEM and TEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDS/X), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), and electroanalytical methods which include linear sweep (LSV) and cyclic (CV) voltammetry and electrochemical impedance spectroscopy (EIS).

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Transition Metal–MoS2 Reactions: Review and Thermodynamic Predictions

Cited by 35 publications

References 139 publications

Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide

Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide

Contacts for Molybdenum Disulfide: Interface Chemistry and Thermal Stability

Instrumental Techniques for Characterization of Molybdenum Disulphide Nanostructures

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