Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography

Tanaka, Masaki; Liu, Grace S.; Kishida, Tomonobu; Higashida, Kenji; Robertson, I. M.

doi:10.1557/jmr.2010.0308

Cited by 14 publications

(9 citation statements)

References 16 publications

(19 reference statements)

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“…The sub-100nm regime is already being intensively studied in the TEM (without tomography), but the 100-1000nm and >1μm regimes may be accessible with higher voltage instruments allied with a suitable tomography specimen holders. Tanaka et al have realized high voltage electron tomography at 1.25 MeV recently with the silicon crack-tip specimens [21] and dislocations punched out at oxide precipitates [22]. However, the prospect of three angles of tilt and in-situ indenting/compression punches is still someway off.…”

Section: Discussionmentioning

confidence: 99%

3-dimensional imaging of dislocation microstructures by electron beams

et al. 2012

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We review the progress in the electron tomography of dislocation microstructures in the transmission electron microscope (TEM). Dislocation contrast is visible both in conventional TEM and scanning TEM (STEM) modes and, despite the complicated intensity variations, dislocation contrast can be isolated using computational filtering techniques prior to reconstruction. We find that STEM annular dark-field (STEM-ADF) imaging offers significant advantages in terms of dislocation contrast and background artifacts. We present several examples, both in semiconducting and metallic systems, illustrating the properties of 3D dislocations. We present the high-angle triple-axis (HATA) specimen holder where the diffraction condition can be chosen at will and dislocation tomograms of multiple reflections can be combined. 3D dislocations are analyzed in terms of dislocation density and dislocation nodal structures. Several avenues of study are suggested that may exploit the 3D dislocation data.

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Section: Discussionmentioning

confidence: 99%

3-dimensional imaging of dislocation microstructures by electron beams

et al. 2012

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“…Secondary defects are classified into various types according to the implanted elements, implantation conditions, and recovery annealing conditions. 5,6) For example, studies have reported dislocation loops, such as punch-out, 7) twin, 8,9) and precipitation dislocation loops. 10,11) In addition, the brittle-ductile transition behavior due to the temperature dependence of dislocation motion has been actively studied.…”

Section: Introductionmentioning

confidence: 99%

Effect of ion implantation on mechanical strength of silicon wafers

Takata

Fujise

et al. 2022

Jpn. J. Appl. Phys.

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This study investigates the effects of the secondary defects caused by ion implantation on wafer strength. The change in wafer strength with the ion implantation amount has been examined after implanting phosphorus or boron ions into wafers with and without heat treatment. Ion implantation defects have been observed using transmission electron microscopy after ion implantation and recovery annealing. The three-point bending tests carried out with the ion implanted samples show that the upper yield stress, which represents wafer strength, decreases owing to implantation-induced secondary defects. In addition, the strength of the wafers with a low oxygen concentration is lower than that of the wafers with a high oxygen concentration. However, the rate of decrease in wafer strength as a function of implantation amount is not affected by the oxygen concentration; it only depended on the implanted element.

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“…Recently, the diffraction contrast is rather used positively to obtain the three-dimensional structure of lattice defects, such as dislocations. [10][11][12][13][14] The three-dimensional structure of dislocations can be given by maintaining the diffraction constant during the acquisition of the tilting series. In the present study, crack tip dislocations in a silicon single crystal was observed by combining highvoltage electron microscopy [15][16][17] (HVEM) and electron tomography.…”

Section: Introductionmentioning

confidence: 99%

The Early Stage of Dislocation Process around a Crack Tip Observed by HVEM-Tomography in Silicon Single Crystals

et al. 2011

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Crack tip dislocations in silicon single crystals were observed by combining high-voltage electron microscopy and electron tomography. Cracks were introduced by an indentation method and dislocations were introduced around the crack tip by keeping the indented sample at high temperatures for several hours. The number of dislocations emitted from the crack tip was controlled by changing the holding time of the indented specimen at high temperatures. The dislocations observed were characterized in detail. It was found that primary emitted dislocations all had the same Burgers vectors and that some dislocation segments cross-slipped around the crack. The local stress intensity factor due to dislocations was calculated, basing on the dislocation character obtained in this study, indicating that emitted dislocations shields mode I, II and III stress intensity at the crack tip. After the emission of the number of those dislocations, dislocations with another Burgers vector were emitted around the crack. It was found that those dislocations accommodate mode II and III stress components which are the excess shielding fields due to the dislocations primary emitted from the crack tip.

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Transition from a punched-out dislocation to a slip dislocation revealed by electron tomography

Cited by 14 publications

References 16 publications

3-dimensional imaging of dislocation microstructures by electron beams

3-dimensional imaging of dislocation microstructures by electron beams

Effect of ion implantation on mechanical strength of silicon wafers

The Early Stage of Dislocation Process around a Crack Tip Observed by HVEM-Tomography in Silicon Single Crystals

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