We have studied the low-temperature (T=6K) optical properties of a series of InGaN∕GaN single-quantum-well structures with varying indium fractions. With increasing indium fraction the peak emission moves to lower energy and the strength of the exciton–longitudinal-optical (LO)-phonon coupling increases. The Huang–Rhys factor extracted from the Fabry–Pérot interference-free photoluminescence spectra has been compared with the results of a model calculation, yielding a value of approximately 2nm for the in-plane localization length scale of carriers. We have found reasonable agreement between this length scale and the in-plane extent of well-width fluctuations observed in scanning transmission electron microscopy high-angle annular dark-field images. High-resolution transmission electron microscopy images taken with a short exposure time and a low electron flux have not revealed any evidence of gross indium fluctuations within our InGaN quantum wells. These images could not, however, rule out the possible existence of small-scale indium fluctuations, of the order of a few at. %.

InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich “clusters” in a homogeneous quantum well.

Nanomaterials find increasing application in communications, renewable energies, electronics and sensing. Because of its unsurpassed speed and highly tuneable interaction with matter, using light to guide the self-assembly of nanomaterials can open up novel technological frontiers. However, large-scale light-induced assembly remains challenging. Here we demonstrate an efficient route to nano-assembly through plasmon-induced laser threading of gold nanoparticle strings, producing conducting threads 12±2 nm wide. This precision is achieved because the nanoparticles are first chemically assembled into chains with rigidly controlled separations of 0.9 nm primed for re-sculpting. Laser-induced threading occurs on a large scale in water, tracked via a new optical resonance in the near-infrared corresponding to a hybrid chain/rod-like charge transfer plasmon. The nano-thread width depends on the chain mode resonances, the nanoparticle size, the chain length and the peak laser power, enabling nanometre-scale tuning of the optical and conducting properties of such nanomaterials.

Herein, we present an approach to create a hybrid between single-atom-dispersed silver and a carbon nitride polymer. Silver tricyanomethanide (AgTCM) is used as a reactive comonomer during templated carbon nitride synthesis to introduce both negative charges and silver atoms/ions to the system. The successful introduction of the extra electron density under the formation of a delocalized joint electronic system is proven by photoluminescence measurements, X-ray photoelectron spectroscopy investigations, and measurements of surface ζ-potential. At the same time, the principal structure of the carbon nitride network is not disturbed, as shown by solid-state nuclear magnetic resonance spectroscopy and electrochemical impedance spectroscopy analysis. The synthesis also results in an improvement of the visible light absorption and the development of higher surface area in the final products. The atom-dispersed AgTCM-doped carbon nitride shows an enhanced performance in the selective hydrogenation of alkynes in comparison with the performance of other conventional Ag-based materials prepared by spray deposition and impregnation-reduction methods, here exemplified with 1-hexyne.

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