Transit Time Devices

Abstract

The sections in this article are Impatt Diodes Impatt Structures and Doping Profiles Basic Principle of Generation of Microwaves in Impatt Diodes Small‐Signal Analysis Based on Analytical Approximation Computer Studies of the DC and Small‐Signal Properties of Impatt Diodes of any Doping Profile Small‐Signal Computer Analysis of Impatt Diodes Large‐Signal Analysis of Impatt Diodes DC‐to‐Microwave Conversion Efficiency Effect of Mobile Space Charge Double Avalanche Region Diode and Cancellation of Space Charge Effect Low–High–Low Diodes for Reduction of the Space Charge Effect and Constriction of the Avalanche Zone High‐Frequency Considerations Noise in Impatt Diodes Thermal Limitations and Heat Sink Millimeter‐Wave Impatt Diodes Pulsed Millimeter‐Wave Impatt Diode Frequency Chirp in Pulsed Impatt Oscillators GaAs and InP Impatt Diodes Heterojunction Impatt Diodes Control of Impatt Properties by Optical Illumination of the Active Area and by A Transverse Field in the Drift Region Trapatt Diode Baritt Diodes Acknowledgement

Series Resistance of Silicon Millimeter Wave (Ka-band) IMPATT Diodes

“…The IMPATT devices have emerged as most powerful solidstate devices for generation of high CW and pulsed-power in millimeter wave frequencies 1 . For silicon monolithic millimeter wave integrated circuits (SIMMWICs), the IMPATT diode provides high oscillator output power combined with high efficiency 2 .…”

Determination of Series Resistance of Silicon Millimeter wave (Ka-Band) IMPATT Diodes

“…IMPact Avalanche Transit Time (IMPATT) devices have emerged as most powerful solid-state devices for generation of high CW and pulsed power in millimeter wave frequencies [1] and also for silicon monolithic millimeter-wave integrated circuit's (SIMMWIC's), the IMPATT diode provides high oscillator output power combined with high efficiency [2]. Since last four decades, several workers have been exploring the possibility of high power generation either from a single IMPATT diode or from several diodes by using the power combining technique.…”

“…R, is the series resistance of the device, g is the load conductance and L is the circuit inductance, which is tuned to give the desired frequency. In a practical oscillator circuit, the steady-state condition for oscillation is given by [6] g =-G-B2Rs (1) Considering higher order term, a more accurate expression of the steadystate condition for oscillation can be written as g=-G-G2R -B R s s In the practical case, it is good approximation to take g = 0 at the oscillation threshold [6]. I over the magnitude of field maximum and its location in the depletion layer.…”