Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates

Maszara, W.; Krivokapić, Zoran; King, Peter; Goo, Jung-Suk; Lin, Ming-Ren

doi:10.1109/iedm.2002.1175854

Cited by 70 publications

(34 citation statements)

References 3 publications

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“…Mono-nickel-silicide (NiSi) is a promising metal gate candidate in the CMOS technology [6], and its work function can be modified through dopant segregation effects at the oxide interface [7]- [9]. Antimony implantation in the polysilicon gate prior to gate silicidation was reported to reduce the NiSi work function [8], [9].…”

Section: Process Designmentioning

confidence: 99%

A novel split-gate MOSFET design realized by a fully silicided gate process for the improvement of transconductance and output resistance

Yuan

Woo

2005

IEEE Electron Device Lett.

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Work function tuning of nickel silicide (NiSi) gates was utilized to fabricate a novel split-gate MOSFET with improved device performance. The MOSFET with a NiSi split gate has been achieved by implanting antimony into the polysilicon gate from the drain side with a tilt angle, followed by a full nickel-silicidation process. The laterally nonuniform antimony implantation causes the NiSi gate work function to vary from the source side to the drain side due to the dopant segregation effect. Improved current drive and output resistance are observed in the MOSFET with such a NiSi split gate. Metal gate advantages and NiSi process simplicity were also realized in the split-gate process, and gate oxide quality did not degrade due to the low temperature process. This split-gate design is expected to be applicable in the nanoscale regime by optimizing process conditions.

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Section: Process Designmentioning

confidence: 99%

A novel split-gate MOSFET design realized by a fully silicided gate process for the improvement of transconductance and output resistance

Yuan

Woo

2005

IEEE Electron Device Lett.

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“…CoSi 2 and NiSi FUSI have already been investigated for this purpose. Both show the advantages of eliminating poly-depletion and low sheet resistance [5,6]. While both CoSi 2 and NiSi are mid-gap materials, tuning of the work function of NiSi by the pre-implantation of B and As into poly-Si has been [6].…”

Section: Introductionmentioning

confidence: 98%

“…Both show the advantages of eliminating poly-depletion and low sheet resistance [5,6]. While both CoSi 2 and NiSi are mid-gap materials, tuning of the work function of NiSi by the pre-implantation of B and As into poly-Si has been [6]. The fact that the work function of NiSi can be tuned by dopants, the low resistivity of this phase and the low temperature of formation make it a promising candidate for 45-nm and below CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies

Pawlak

Kittl

Chamirian

et al. 2004

Microelectronic Engineering

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“…However, the poly-Si gate suffers from poly depletion effect that increases the overall EOT and boron diffusion through the gate dielectric that causes threshold voltage instability. Metal gate materials, which are free from poly depletion effect, with workfunction suitable for both p and nMOSFETs have been recently under extensive research [6][7][8]. However, the learning curve for integration of dual-workfunction metal gates into CMOS seems to be long and therefore they are rather served as a long-term solution.…”

Section: Introductionmentioning

confidence: 99%