Microelectronic Engineering
 2005
DOI: 10.1016/j.mee.2004.08.004
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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack

Depei Wu
1
,
Martin von Haartman
2
,
Johan Seger
3
et al.
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