Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Haartman, Martin von; Westlinder, Jörgen; Wu, Depei; Malm, B. Gunnar; Hellström, Per‐Erik; Olsson, Jörgen; Östling, Mikael

doi:10.1016/j.sse.2005.03.009

Cited by 23 publications

(24 citation statements)

References 21 publications

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“…Also, the spread is significantly higher compared with the interface traps. The scattering coefficient derived from the initial slope of the 1/µ versus qD ot trend yields an acceptable value in the range of 10 4 V · s/C [21], [22], [24].…”

Section: Resultsmentioning

confidence: 94%

“…It should be noted that for the 1/f noise of metal gate/high-κ p-channel transistors, one usually finds a behavior that is more in line with the mobility fluctuations (∆µ) theory [15], [20], although it has been shown that on Si 0.8 Ge 0.2 surface channel pMOSFETs with ALD Al 2 O 3 /TiN stack correlated number fluctuations appear to be dominant [21].…”

Section: Resultsmentioning

confidence: 99%

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Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

Guo

Nicholas

Kaczer

et al. 2007

IEEE Electron Device Lett.

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The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO 2 /SiO 2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1/f γ type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

Guo

Nicholas

Kaczer

et al. 2007

IEEE Electron Device Lett.

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“…As is well known, the mobility is limited by ionized impurity scattering, surface roughness scattering and phonon (lattice) scattering, and Coulomb scattering of free carriers at trapped charges in the oxide [27], [28], which can be given by…”

Section: Discussionmentioning

confidence: 99%

Low-Frequency Noise Characterization of GeO<sub><italic>x</italic></sub> Passivated Germanium MOSFETs

Wen

Simoen

Arimura

et al. 2015

IEEE Trans. Electron Devices

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The gate-stack quality of planar MOSFETs fabricated in Ge-on-Si substrates and passivated by a GeO x interfacial layer is evaluated by low-frequency noise analysis. It is shown that for both n-and p-channel transistors predominantly 1/ f γ noise (γ ∼1) has been observed, which originates from number and correlated mobility fluctuations. The oxide trap density and mobility scattering coefficient derived from the inputreferred voltage noise power spectral density are demonstrated to be significantly higher for nMOSFETs than for pMOSFETs with the same gate-stack, which explains the low electron mobility.Index Terms-1/ f noise, Ge MOSFETs.

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“…151 A forming gas anneal, 10% H 2 /90% N 2 at 400 °C, was employed in all high-k devices in this work and is not given particular attention here. Instead, in order to reduce the fixed charge and trap densities in the high-k material (even further), thereby possibly reducing the 1/f noise, a novel post-processing step in form of low-temperature water vapour annealing was performed.…”

Section: Influence Of Different Annealing Treatmentsmentioning

confidence: 99%

Low-Frequency Noise In Advanced Mos Devices

2007

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Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics

Cited by 23 publications

References 21 publications

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ $\hbox{HfO}_{2}$ Gate Stack

Low-Frequency Noise Characterization of GeO<sub><italic>x</italic></sub> Passivated Germanium MOSFETs

Low-Frequency Noise In Advanced Mos Devices

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