Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Hwang, Wan Sik; Remškar, Maja; Yan, Rusen; Protasenko, Vladimir; Tahy, Kristof; Chae, Seung‐Hoon; Zhao, Pei; Konar, Aniruddha; Hui-Li, _; XING, Xing; Seabaugh, Alan; Jena, Debdeep

doi:10.1063/1.4732522

Cited by 258 publications

(227 citation statements)

References 31 publications

(20 reference statements)

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“…In addition, PL measurements were taken on the MoS 2 films (not shown) and were found to provide significant edge-enhanced PL similar to CVD tungsten disulfide (WS 2 ) films. 17,18 A strong quenching of the PL intensity in bilayer regions, which would be expected due to the direct to indirect bandgap transition, was also observed. 1 Backscatter electron images of an additional crystal are shown in Figure 1(c); the presence of a secondary, dendriticlike growth as well as sub-10 nm triangles with no apparent preferred orientation can be observed from these images.…”

mentioning

confidence: 82%

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Amani

Chin

Birdwell

et al. 2013

Applied Physics Letters

211

150

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Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300 K without a high-κ dielectric overcoat and increased to 16.1 cm2/V s with a high-κ dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109.

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mentioning

confidence: 82%

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Amani

Chin

Birdwell

et al. 2013

Applied Physics Letters

211

150

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“…MoS 2 with thickness ranging from 10 to 60 nm was used to detect light in UV-to-near-IR radiation [109]. FETs fabricated using fewlayer WS 2 prepared by sonication in IPA exhibit ambipolar behaviour, with a high current on/off ratio of approximately 10 5 and good photosensitivity to visible light [110]. Back-gated FET of ultrathin MoSe 2 obtained by mechanical exfoliation showed n-type characteristics with a mobility of 50 cm 2 V −1 s −1 and current on/off ratio exceeding 10 6 [111].…”

Section: Field-effect Transistorsmentioning

confidence: 99%

Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides

Jana¹,

Rao²

2016

Phil. Trans. R. Soc. A.

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The discovery of graphene marks a major event in the physics and chemistry of materials. The amazing properties of this two-dimensional (2D) material have prompted research on other 2D layered materials, of which layered transition metal dichalcogenides (TMDCs) are important members. Single-layer and few-layer TMDCs have been synthesized and characterized. They possess a wide range of properties many of which have not been known hitherto. A typical example of such materials is MoS 2 . In this article, we briefly present various aspects of layered analogues of graphene as exemplified by TMDCs. The discussion includes not only synthesis and characterization, but also various properties and phenomena exhibited by the TMDCs.This article is part of the themed issue 'Fullerenes: past, present and future, celebrating the 30th anniversary of Buckminster Fullerene'.

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“…Similar to graphene [1], hexagonal boron nitride (h-BN) [2][3][4] adopts a 2D nanostructure that has attracted significant interest in recent years due to its significant mechanical, electrical and chemical properties, and potential applications in nanotechnology [5][6][7]. The most distinctive advantages of BN nanomaterials over their carbon counterparts are that BN systems are electrically insulating [8,9] and more stable at high temperature and in various chemical environments [10], combined with comparable levels of conductivity and mechanical performance [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Super stretchable hexagonal boron nitride Kirigami

2017

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General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Abstract Kirigami, the ancient Japanese art of cutting and folding paper at the macroscale, has been recently applied to produce nanostructures with unusual deformation mechanisms. In this work we analyse the mechanical properties and deformation mechanisms leading to remarkable stretching and bilinear stiffness in armchair and zigzag hexagonal boron nitride (h-BN) Kirigami nanosheets using classical molecular dynamics simulations. We identify three geometric parameters that govern the mechanics and ductility of Kirigami h-BN. Enhancements in tensile strains up to 3-5 times higher than those of pristine h-BN can be obtained. The variations of stiffness, ultimate strength and strain with the parameters defining the Kirigami defect patterns can be used to tune the mechanical properties of h-BN and other nano 2D structures, potentially expanding their applications in bio-compatible strain-engineered nanodevices and nanoelectronics.

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Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

Abstract: We report the realization of field-effect transistors (FETs) made with chemically-

Cited by 258 publications

References 31 publications

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides

Super stretchable hexagonal boron nitride Kirigami

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