Transient sputtering of silicon by argon studied by molecular dynamics simulations

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

“…However, the most straightforward (and accurate) approach to characterize damage accumulation is by performing sequential impacts on the same target. Thus, although this method is limited by prohibitive computational times, it can still be used to assess different properties, like the sputtering yield [175] or the sharpness of the amorphous-crystalline interface [175,176], during the stage of formation of the amorphous layer.…”

Surface amorphization, sputter rate, and intrinsic stresses of silicon during low energy Ga+ focused-ion beam milling

“…Previous work has focused on single impact events [8][9][10][11][12], sputtering silicon using argon ions [13][14][15][16][17] and stresses [18]. For a review on the topic see [19].…”

Trench formation and lateral damage induced by gallium milling of silicon

“…If these beams and techniques are to keep pace with the demand for rapidly shrinking circuitry, an investigation into the fundamental dynamics of their behavior is essential. The success of molecular dynamics (MD) simulation for examining bombardment events such as these has been well established in the secondary ion mass spectrometry (SIMS) community [4][5][6][7][8][9][10][11]. Typically, in MD simulations of SIMS, each projectile bombards a fresh portion of the sample.…”