Transient phenomena at Schottky Au-CdZnTe interface

Elhadidy, H.; Franc, J.; Dědič, V.; Musiienko, Artem

doi:10.1088/1748-0221/13/10/c10001

Cited by 4 publications

(3 citation statements)

References 25 publications

(35 reference statements)

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“…(2.3). The values of ρ and N A are in agreement with that reported for p-CdTe in [24]. We note that the values of ρ increase with T and N A decreases (table 1).…”

Section: Temperature Dependence Of Electromigration Phenomenasupporting

confidence: 90%

“…In a real Schottky diode, several mechanisms have been reported to explain the lack of the saturation of the reverse current [22]. In Au/CdTe contact, barrier lowering due to image force [23] or due to formation of interface layer [24] have been reported as a possible reason for the non-saturated current. In that cases the reversed current…”

Section: I-v Characteristicmentioning

confidence: 99%

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Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

et al. 2018

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In this work we present the transient measurements along a Au/CdTe/Au structure in the temperature range of 323K-363K to deepen the understanding of the electromigration phenomena. Removal of the anode contact and of a thin layer below was necessary after each measurement to have similar distribution of the donor ions in the depletion region for each new measurement. The diffusion coefficients at different temperatures have been determined and the activation energy of the electromigration process was extracted to be 0.36 eV. Current-Voltage measurements have been carried out and revealed that the thermal carrier generation in the depleted region is the dominant carrier mechanism responsible for the bias dependence of the leakage current. The acceptors concentration at different temperatures was determined from the resistivity measurements.

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“…(2.3). The values of ρ and N A are in agreement with that reported for p-CdTe in [24]. We note that the values of ρ increase with T and N A decreases (table 1).…”

Section: Temperature Dependence Of Electromigration Phenomenasupporting

confidence: 90%

Section: I-v Characteristicmentioning

confidence: 99%

Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

et al. 2018

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“…In spite of the undoubted progress in CdTe radiation detector technology, there are remaining issues that need to be addressed in this type of material. One of them is the polarization of biased detectors equipped with Schottky contacts, which results in signal deterioration in time [ 8 , 9 , 10 ]. The polarization is caused by the space charge formation in the depleted detector inducing the screening of the applied bias and leading to an appearance of an inactive region (dead layer) under one of the contacts.…”

Section: Introductionmentioning

confidence: 99%

In and Al Schottky Contacts Comparison on P-Type Chlorine-Doped CdTe

Vasylchenko

Grill

Betušiak

et al. 2021

Sensors

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The performance of the CdTe radiation detectors heavily relies on the method of contact preparation. A convenient research method addressing this problem is the laser-induced transient current technique. In this paper, we compare the performance of two CdTe crystals which underwent different metallization processes. We showed that appropriately designed Au/Al contacts induce much less bulk polarization than commercial Pt/In electrodes under the same working conditions and can thus provide a convenient alternative to the industry standard. The comparison was based on the monitoring of the time-dependent sensor polarization measuring transient currents excited by above-bandgap laser illumination complemented by the Am 241 gamma spectroscopy. The theoretical analysis of current waveforms and radiation spectra enabled us to determine the charge carrier mobility, mobility-lifetime products of electrons and holes, and temporal and bias dependence of the space charge formation.

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