Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

Abstract

In this work we present the transient measurements along a Au/CdTe/Au structure in the temperature range of 323K-363K to deepen the understanding of the electromigration phenomena. Removal of the anode contact and of a thin layer below was necessary after each measurement to have similar distribution of the donor ions in the depletion region for each new measurement. The diffusion coefficients at different temperatures have been determined and the activation energy of the electromigration process was extracted to be 0.36 eV. Current-Voltage measurements have been carried out and revealed that the thermal carrier generation in the depleted region is the dominant carrier mechanism responsible for the bias dependence of the leakage current. The acceptors concentration at different temperatures was determined from the resistivity measurements.

Low-Temperature Annealing of CdZnTeSe under Bias

“…Kim et al [ 17 ] showed the improvement in the mobility-lifetime product after the treatment of CZT at 493 K at a voltage of 60 V for 7 and 60 days, which they assigned to the electromigration of Cu, Fe, and Ga impurities. Additional studies demonstrated the electromigration of positively charged donors in CdTe-based materials, which mainly affect the electrical properties [ 18 , 19 , 20 ].…”