Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric MQW pin diodes

Izpura, I.; Valtueña, J.F.; Sánchez‐Rojas, J. L.; Sacedón, A.; Calleja, E.; Muñoz, E.

doi:10.1016/0038-1101(95)00311-8

Cited by 6 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The literature data are very scarce in this respect, and they are collected in Fig. 2 [12][13][14][15][16][17], together with our present result for x = 0.53.…”

Section: Discussionsupporting

confidence: 63%

“…Our experimental result for the composition x = 0.53 roughly fits the expected linear interpolation between the end compounds. However the only other data from the literature for composition around x = 0.15 0.25 [15][16][17] are lying markedly lower. However, these latter values were deduced from photocurrent measurements on InGaAs/GaAs multi-quantum well (MQW) p-i-n diodes.…”

Section: Discussionmentioning

confidence: 78%

See 1 more Smart Citation

Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

et al. 1998

View full text Add to dashboard Cite

The energy relaxation in two-dimensional electron gas in In0.53 Ga0.47 As/ InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h14 = (1.1±0.1) x 10 7

show abstract

“…The literature data are very scarce in this respect, and they are collected in Fig. 2 [12][13][14][15][16][17], together with our present result for x = 0.53.…”

Section: Discussionsupporting

confidence: 63%

Section: Discussionmentioning

confidence: 78%

Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

et al. 1998

View full text Add to dashboard Cite

show abstract

“…The experimental data are taken from S anchez-Rojas et al[5] (solid circles), Chan et al[6] (open square) and Izpura et al[7] (open triangle). The experimental data are taken from S anchez-Rojas et al[5] (solid circles), Chan et al[6] (open square) and Izpura et al[7] (open triangle).…”

mentioning

confidence: 99%

Collective Effects and Some Response Characteristics

Adachi

2009

Properties of Semiconductor Alloys

View full text Add to dashboard Cite

A crystal with a center of symmetry cannot be piezoelectric [1]. Thus, the diamond-type crystals (diamond, Si, Ge and a-Sn) cannot be piezoelectric. Tables 5.1 and 5.2 summarize the piezoelectric constants for some A N B 8ÀN tetrahedral semiconductors with cubic and hexagonal crystal structures, respectively. Note that the piezoelectric strain constant d ij is connected reciprocally with the stress constant e ik in the following manner Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

show abstract

“…Because the special potential profile in the intrinsic region, photogenerated carriers tunnel and escape the QW's, moving towards the extreme QW's, creating a charge dipole that screens (out-well, long-range screening) the AEF. This spatial carrier separation is the source of memory, bistability, and negative-transient photocurrent effects [13,14].…”

mentioning

confidence: 99%

Piezoelectric III-V semiconductor devices

Muñoz-Merino

1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings

View full text Add to dashboard Cite

Strained III-V layers develop a charge polarization vector for all orientations except for the standard (001) one. Besides, by selecting the crystal orientation, a valence band engineering can be made, to exploit sub-band splitting and their anisotropies. Piezoelectric devices have shown superior performances in modulators, SEED'S and HEMT's. Besides, very low threshold current have been achieved in strained lasers when grown along orientations different from the (001). It has been shown that the piezoelectric electric field is only partially screened at lasing. Polarization control in VCSEL's, and double harmonic generation, have also been proposed as another areas of application for structures grown along non-(001) surfaces.In the search for new and improved electronic and optoelectronic devices, engineers have develop different tools (materials/alloys, heterojunctions, quantum confinement), and recently strain was incorporated. Crystal orientation is as a new tool, and strained low-dimensionality structures grown along non-(00 1) orientations offer new and interesting possibilities. Although it was well known that HI-V semiconductors were piezoelectric materials, the indication that strained 111-V layers will develop very important piezoelectric fields (PEF), except for the standard (001) orientation was published about a decade ago [l]. In general, interface polarization charges, and hence piezoelectric fields, will be developed in strained structures along non-standard index surfaces (NIS), and they are maximum for growth along the (1 1 1) direction. For the InGaAs/GaAs systems, piezoelectric fields as large as 4 x lo5 V/cm were predicted and experimentally confirmed [2].In quantum confined structures, the use of pseudomorphically strained layers along directions other than (OOl), incorporate a number of potential benefits: a) the presence of built-in piezoelectric fields that can be controlled in sense and also modulated externally; b) a valence band structure with a larger HH-LH subband splitting, that leads to a lower in-plane hole effective mass density of states and to an enhancement of the TE polarization mode, and with a significant anisotropy that allows to control the in-plane polarization angle; c) a lower impurity incorporation (a reduced C concentration has been claimed for GaAs (1 1 l)B orientation); d) a dopant site incorporation that depends on substrate orientation and growth conditions, and that may lead to an enhanced amphoteric behavior of certain species; e) for these non-(001) orientations, the critical layer thickness may be larger than for the (1 00) orientation, allowing the growth of new pseudomorphic structures; and, f) for proper orientations, the presence of optical matrix elements that enhance the oscillator strength. Most of the experimental work on NIS has been made on GaAs-based structures, although the use of InP substrates is attracting a growing attention.A basic structure to study the PEF fingerprints is to embed one or several strained QW's into the intrinsic region of a ...

show abstract

Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric MQW pin diodes

Cited by 6 publications

References 9 publications

Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

Collective Effects and Some Response Characteristics

Piezoelectric III-V semiconductor devices

Contact Info

Product

Resources

About