Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

Kreshchuk, A. M.; Новиков, С. В.; Savel'ev, I. G.; Polyanskaya, T. A.; Pődör, B.; Reményi, G.; Kovács, Gy.

doi:10.12693/aphyspola.94.415

Cited by 6 publications

(5 citation statements)

References 11 publications

(16 reference statements)

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“…Experimental work concerning the acoustic-phonon-assisted energy relaxation of 2D electrons in high electron mobility transistor (HEMT) structures has been published by a large number of groups [2,[4][5][6][7][8][9][10][11][12][13][14][15][16][17][18]. It has been often reported that the energy-loss rates show a power-law dependence on the electron temperature T e with an exponent, which varies depending on the base lattice temperature (T L0 ) of measurements and also on the range of electron temperatures, but information in detail is sparse.…”

Section: Introductionmentioning

confidence: 99%

Electron Energy Relaxation via Acoustic Phonon Emission in GaAs/Ga1?xAlxAs Multiple Quantum Wells: Effects of Base Lattice Temperature

Cankurtaran

Çelik

Balkan

2002

phys. stat. sol. (b)

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The two-dimensional (2D) electron energy relaxation associated with acoustic phonon emission in GaAs/Ga 1--x Al x As multiple quantum wells (MQW) has been investigated using hot-electron Shubnikov-de Haas (SdH) effect measurements performed at three different base lattice temperatures T L0 ffi 1.7, 3.5 and 5.9 K. The modulation-doped MQW samples studied have quantum well widths L Z = 51, 75 and 78 A, and only the lowest subband in each sample is populated with a 2D electron density of about 1.10 Â 10 16 m --2 . The electron temperature (T e ) has been determined from the lattice-temperature and electric-field dependencies of the amplitude of the SdH oscillations. The energy-loss rates show a power-law dependence on T e with an exponent g, which depends on T L0 . The experimental results are compared with the current theoretical models for power loss in 2D and 3D semiconductors, which include both piezoelectric and deformation-potential scattering. The electron-temperature dependence of power loss, determined experimentally at liquid-helium temperatures with T L0 ffi 1.7 K, fits well to both the 2D and 3D theoretical models in the low-temperature regime, while the results at T L0 ffi 3.5 and 5.9 K fit best to those in the intermediate-temperature regime. The results provide useful information about the relative magnitude of the deformation-potential and piezoelectric contributions to power loss.

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Section: Introductionmentioning

confidence: 99%

Electron Energy Relaxation via Acoustic Phonon Emission in GaAs/Ga1?xAlxAs Multiple Quantum Wells: Effects of Base Lattice Temperature

Cankurtaran

Çelik

Balkan

2002

phys. stat. sol. (b)

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“…Experimental research on the energy-loss rates of 2D electrons in the acoustic-phonon scattering regime has been reported by a large number of groups [3,[9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Most of the research reported previously in the literature, however, has been carried out on high electron mobility transistor (HEMT) structures, where the interpretation of the experimental results is often complicated by a number of factors; for example, existing theories are based on the ideal quantum-well approximation with single-subband occupancy and, therefore, predict a power loss with a strong dependence on the confinement length.…”

Section: Introductionmentioning

confidence: 99%

Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga_1 xAl_xAs multiple quantum wells: well-width dependence

Çelik

Cankurtaran

Balkan

et al. 2001

Semicond. Sci. Technol.

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The well-width dependence of the two-dimensional (2D) electron energy relaxation associated with acoustic-phonon emission in GaAs/Ga 1−x Al x As multiple quantum wells (MQWs) has been investigated using Shubnikov-de Haas (SdH) effect measurements in the temperature range of 3.3-15 K and at applied electric fields up to 300 V m −1. The modulation-doped MQW samples studied have quantum-well widths (L z) in the range between 40 and 145Å; only the lowest subband in each sample is populated with a 2D carrier density in the range from 1.04 × 10 16 m −2 to 1.38 × 10 16 m −2. The power loss-electron temperature characteristics of the samples have been obtained from the lattice temperature and electric field dependences of the amplitude of the SdH oscillations. It is found that the power loss decreases markedly when L z increases from 40Å to about 120Å and it increases for L z > 120Å. The experimental results are compared with the current 2D and three-dimensional (3D) theoretical models for power loss, which include both piezoelectric and deformation-potential scattering. The electron-temperature dependence of power loss determined experimentally fits well to both the 2D and 3D theoretical models in the intermediatetemperature regime but with different values for the acoustic deformation potential. It is shown that for samples with L z in the range of 40-120Å, the 2D model predicts a dependence of power loss on the well width, which is similar to that observed experimentally. The 3D model, however, predicts a power loss which increases with increasing well width and describes well the well-width dependence of the experimental power loss for wide wells (L z 120Å). The results provide useful information about the relative magnitude of the deformation-potential and piezoelectric contributions to power loss.

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“…The energy separation between the first and upper electron subbands in the quantum well, E 1 − E 0 , was estimated in the triangular well approximation and we obtained (E 1 − E 0 )/ε F ∝ F 2/3 equals to 20 ± 3 1. The above qualitative analysis can be supported by a calculation using equations ( 8) and (9). Let us introduce a normalized temperature T * e = q t,Te /k F ≡ T e /hs t k F .…”

Section: Analysis Of Experimental Resultsmentioning

confidence: 96%

“…We took the value of piezoelectric constant h 14 = 0.95×10 7 V cm −1 to calculate Q(T e ) for the PA interaction in a wider temperature range using full equations ( 8), (9). The experimental and calculated dependences Q(T e ) at T = 0.092 K and at T = 0.56 K are compared in figure 5(a) and 5(b), respectively.…”

Section: Analysis Of Experimental Resultsmentioning

confidence: 99%

“…The interaction of 2DEG with acoustic phonons in the In 0.53 Ga 0.47 As/InP quantum well is poorly understood. Besides our work [9], we are aware of only one paper [10] dealing with heating of 2DEG in such structures. The data obtained in [9,10] furnish only preliminary information on the types of e-ph interaction in a narrow temperature range 1.9 < T e < 5 K.…”

Section: Introductionmentioning

confidence: 99%

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Interaction of low-density 2DEG with acoustic phonons

Savel'ev¹,

Reményi²,

Kovács³

et al. 1999

Semicond. Sci. Technol.

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The energy relaxation of two-dimensional electron gas (2DEG) with low density (2.2×10 10 cm −2 ) in selectively-doped In 0.53 Ga 0.47 As/InP heterostructures has been studied over a range of electron temperatures 0.1 < T e < 2 K. The Joule power of the dc current was employed for heating the electron gas, with the four terminal ac resistance of the sample used as electron thermometer. We found that the interaction with a screened small-angle piezoelectric potential of the acoustic phonons dominates in the temperature range 0.1 < T e < 0.4 K. At higher temperatures 0.5 < T e < 1.5 K, the change of energy balance equation is associated with a gradual transition from the small-angle interaction to a quasi-elastic one. The screening of the electron-phonon interaction and the deformation potential of acoustic phonons must be taken into consideration in this temperature range. The best fit to the data was obtained with piezoelectric constant h 14 = (0.95 ±0.05)×10 7 V cm −1 and deformation potential E D = (6 ±1) eV for both temperature ranges.

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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

Cited by 6 publications

References 11 publications

Electron Energy Relaxation via Acoustic Phonon Emission in GaAs/Ga1?xAlxAs Multiple Quantum Wells: Effects of Base Lattice Temperature

Electron Energy Relaxation via Acoustic Phonon Emission in GaAs/Ga1?xAlxAs Multiple Quantum Wells: Effects of Base Lattice Temperature

Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga_1 xAl_xAs multiple quantum wells: well-width dependence

Interaction of low-density 2DEG with acoustic phonons

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Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction

Cited by 6 publications

References 11 publications

Electron Energy Relaxation via Acoustic Phonon Emission in GaAs/Ga1?xAlxAs Multiple Quantum Wells: Effects of Base Lattice Temperature

Electron Energy Relaxation via Acoustic Phonon Emission in GaAs/Ga1?xAlxAs Multiple Quantum Wells: Effects of Base Lattice Temperature

Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga1 xAlxAs multiple quantum wells: well-width dependence

Interaction of low-density 2DEG with acoustic phonons

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Hot electron energy relaxation via acoustic-phonon emission in GaAs/Ga_1 xAl_xAs multiple quantum wells: well-width dependence