Transient model for gate turn-off thyristor in power electronic simulations

Liang, Yuhao; Gosbell, V.J.

doi:10.1080/00207219108921259

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…The use of semiconductor components to replace traditional gas spark switches is a growing trend that can improve output frequency accuracy, suppress circuit oscillations, and improve the effectiveness of reservoir resonance transformation. The physical model of thyristors established in the article, compared to equivalent models constructed with ideal components such as the SPICE model [10] and Hu-Ki model [11], can more clearly simulate the distribution of charge carriers in each internal region during the turn-on and turn-off processes. The critical damping oscillation circuit constructed in the reverse spike voltage suppression method has a simple structure and is very effective.…”

Section: Discussionmentioning

confidence: 99%

“…Therefore, researchers concentrate on addressing voltage distribution problems that arise from reverse recovery [9]. The reverse recovery characteristics of thyristors can be simplified or equivalently transformed based on ideal components to a certain extent, such as the SPICE model [10] and the Hu-Ki model [11]. However, it is not practical to utilize this substitution for designing electronic protection devices like Thyristor Controlled Series Compensator [12] which demands more precise reverse recovery curves.…”

Section: Introductionmentioning

confidence: 99%

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Failure mechanisms of the thyristor switch in pulsed arc electrohydraulic discharges

Yu,

Kang

2024

Semicond. Sci. Technol.

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In order to study the failure mechanism of the thyristor switch in the application of electric pulse fracturing, an underwater pulse power discharge experimental platform was built, the impedance characteristics of the plasma channel were analyzed and the circuit equivalence was carried out for each discharge stage. Then, based on the Silvaco simulation software, a theoretical thyristor model was established. By observing the distribution of the internal carriers and current density, the turnon and turn-off processes of the thyristor switch under high voltage were analyzed. The formation factors of peak voltage in the turn-off process were studied, the easy breakdown position was pointed out, and a method to suppress the reverse peak voltage by creating critical damping oscillations in the discharge circuit was proposed. Finally, a pulsed power discharge experiment was carried out to verify the theoretical analysis. The experimental results show that the discharge waveform conforms to the theoretical analysis, and the high voltage breakdown damage of the thyristor is also consistent with the theoretical simulation model. Furthermore, the proposed thyristor protection method can greatly suppress the reverse voltage spike, reduce the peak voltage by 52%, and effectively avoid the damage caused by withstand voltage breakdown in the application of pulse power discharge.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Failure mechanisms of the thyristor switch in pulsed arc electrohydraulic discharges

Yu,

Kang

2024

Semicond. Sci. Technol.

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“…This topic has not been treated with sufficient attention in the case of power semiconductor models for circuit simulation so far. Only in a part of the modeling papers the required parameters are declared and methods of their determination are described [4], [9], [11]- [13], [20], [21], [23], [28], [32], [37], [38], [49], [50], [81], [83], [92], [126], [132], [133]. For single examples, excellent agreement with measurements can be obtained by adjusting the model parameters to the individual case.…”

Section: Parametersmentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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Failure mechanism of GTO devices and optimization for minimum current crowding during turn-off

Liang

Kee

1994

International Journal of Electronics

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Transient model for gate turn-off thyristor in power electronic simulations

Cited by 7 publications

References 7 publications

Failure mechanisms of the thyristor switch in pulsed arc electrohydraulic discharges

Failure mechanisms of the thyristor switch in pulsed arc electrohydraulic discharges

Status and trends of power semiconductor device models for circuit simulation

Failure mechanism of GTO devices and optimization for minimum current crowding during turn-off

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