Transient enhanced diffusion without {311} defects in low energy B+-implanted silicon

Zhang, L. H.; Jones, K. S.; H., P.; Simons, David S.

doi:10.1063/1.114775

Cited by 118 publications

(21 citation statements)

References 9 publications

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“…3 (inset) the dependency between the dt andx. We find k ≈ 1.7, in agreement with the intuition of k ∈ [1,2]. The threshold distance lets us establish different regimes during the extended defect dissolution.…”

Section: A Extended Defect Dissolutionsupporting

confidence: 74%

“…A thorough understanding of the dissolution kinetics of these defects is needed in order to correctly predict and control the final dopant profile in the deep sub-micron regime. In particular, extra self-interstitials (I) released both from {311} rodlike defects [1] and small clusters [2] cause the Transient Enhanced Diffusion (TED) of commonly used dopants. Four types of selfinterstitial extended defects have been detected experimentally in silicon: [3] small irregular clusters, {311} defects, and faulted and perfect dislocation loops (DLs).…”

Section: Introductionmentioning

confidence: 99%

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From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

Martín-Bragado

Avci

Zographos

et al. 2007

ESSDERC 2007 - 37th European Solid State Device Research Conference

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Abstract-An atomistic model for self-interstitial extended defects is presented in this work. Using a limited set of assumptions about the shape and emission frequency of extended defects, and taking as parameters the interstitial binding energies of extended defects versus their size, this model is able to predict a wide variety of experimental results. The model accounts for the whole extended defect evolution, from the initial small irregular clusters to the {311} defects and to the more stable dislocation loops. The model predicts the extended defect dissolution, supersaturation and defect size evolution with time, and it takes into account the thermally activated transformation of {311} defects into dislocation. The model is also used to explore a two-phase exponential decay observed in the dissolution of {311} defects.

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Section: A Extended Defect Dissolutionsupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

Martín-Bragado

Avci

Zographos

et al. 2007

ESSDERC 2007 - 37th European Solid State Device Research Conference

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“…Previous studies have investigated the use of high power pulsed lasers to melt the implanted layers to achieve high activation and abrupt junctions [5], [6]. Complications arising from melting and regrowth can limit the use of this technique [6]- [8].…”

Section: Introductionmentioning

confidence: 99%

Nonmelt laser annealing of 5-KeV and 1-KeV boron-implanted silicon

Earles

Law

Brindos

et al. 2002

IEEE Trans. Electron Devices

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Abstract-Nonmelt laser annealing has been investigated for the formation of ultrashallow, heavily doped regions. With the correct lasing and implant conditions, the process can be used to form ultrashallow, heavily doped junctions in boron-implanted silicon. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rate greater than 10 C/s. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, nonamorphizing boron implants at a dose of 10 ions/cm and energies of 5 KeV and 1 KeV are annealed with a 308-nm excimer laser. Subsequent rapid thermal anneals are used to study the effect of laser annealing as a pretreatment. SIMS, sheet resistance and mobility data have been measured for all annealing and implant conditions. For the 5-KeV implants, the 308-nm nonmelt laser preanneal results in increased diffusion. However, for the 1-KeV implant processed with ten laser pulses, the SIMS profile shows that no measurable diffusion has occurred, yet a sheet resistance of 420 /sq was produced.

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“…1,2 These clusters are now well known to strongly affect the diffusion behavior of the implanted dopant atoms during the subsequent implant damage annealing [3][4][5][6][7][8][9][10] that is required to heal lattice damage and electrically activate dopant atoms. The diffusion effect is commonly referred to as transient-enhanced diffusion, or TED, because of its strongly nonlinear and time-dependent features.…”

Section: Introductionmentioning

confidence: 99%

“…In particular, it has been challenging to connect quantitatively the implantation and annealing conditions to the observed morphologies, several of which may be present simultaneously. 4,5,7,9,[19][20][21][22][23][24] As a result, there have been numerous studies aimed at experimentally and computationally characterizing the structure, thermodynamics, and dynamical evolution of self-interstitial clusters in crystalline silicon.…”

Section: Introductionmentioning

confidence: 99%

Detailed microscopic analysis of self-interstitial aggregation in silicon. I. Direct molecular dynamics simulations of aggregation

Kapur

Sinno

2010

Phys. Rev. B

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A comprehensive atomistic study of self-interstitial aggregation in crystalline silicon is presented. Here, largescale parallel molecular dynamics simulations are used to generate time-dependent views into the selfinterstitial clustering process, which is important during post-implant damage annealing. The effects of temperature and pressure on the aggregation process are studied in detail and found to generate a variety of qualitatively different interstitial cluster morphologies and growth behavior. In particular, it is found that the self-interstitial aggregation process is strongly affected by hydrostatic pressure. {111}-oriented planar defects are found to be dominant under stress-free or compressive conditions while {113} rodlike and planar defects are preferred under tensile conditions. Moreover, the aggregation pathways for forming the different types of planar defect structures are found to be qualitatively different. In each case, the various cluster morphologies generated in the simulations are found to be in excellent agreement with structures previously predicted from electronic-structure calculations and observed experimentally by electron microscopy. Multiple empirical interatomic potential models were employed and found to generally provide similar results leading to a fairly consistent picture of self-interstitial aggregation. In a companion article, a detailed thermodynamic analysis of various cluster configurations is employed to probe the mechanistic origins of these observations. A comprehensive atomistic study of self-interstitial aggregation in crystalline silicon is presented. Here, large-scale parallel molecular dynamics simulations are used to generate time-dependent views into the selfinterstitial clustering process, which is important during post-implant damage annealing. The effects of temperature and pressure on the aggregation process are studied in detail and found to generate a variety of qualitatively different interstitial cluster morphologies and growth behavior. In particular, it is found that the self-interstitial aggregation process is strongly affected by hydrostatic pressure. ͕111͖-oriented planar defects are found to be dominant under stress-free or compressive conditions while ͕113͖ rodlike and planar defects are preferred under tensile conditions. Moreover, the aggregation pathways for forming the different types of planar defect structures are found to be qualitatively different. In each case, the various cluster morphologies generated in the simulations are found to be in excellent agreement with structures previously predicted from electronic-structure calculations and observed experimentally by electron microscopy. Multiple empirical interatomic potential models were employed and found to generally provide similar results leading to a fairly consistent picture of self-interstitial aggregation. In a companion article, a detailed thermodynamic analysis of various cluster configurations is employed to probe the mechanistic origins of these observations. Discip...

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Transient enhanced diffusion without {311} defects in low energy B+-implanted silicon

Abstract: Articles you may be interested inAn investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon

Cited by 118 publications

References 9 publications

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

Nonmelt laser annealing of 5-KeV and 1-KeV boron-implanted silicon

Detailed microscopic analysis of self-interstitial aggregation in silicon. I. Direct molecular dynamics simulations of aggregation

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