Transient enhanced diffusion and electrical activation of As in Si during rapid thermal annealing

Kögler, R.; Wieser, E.; Voelskow, M.; Otto, G.

doi:10.1016/s0168-583x(87)80103-9

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…Diffusion of arsenic during silicon epitaxial growth.-It has been suggested that the transient enhanced diffusion of arsenic observed during the postimplant anneal will occur through the presence of ion implantation induced point defects and the dissolution of dislocations to form excess vacancies. [30][31][32] The role, however, of defective epitaxial capping layers with regard to the diffusion of arsenic in the underlying substrate remains unknown. In high densities, these epitaxial defects could enhance arsenic diffusion through the injection of point defects or promote further diffusion along the extended defect boundaries.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, it is not anticipated that the solid-phase epitaxial growth of the implantation induced amorphous region played any contributing role in the observed arsenic diffusion since the in situ preclean of 800ЊC for 15 s prior to deposition should have been adequate for complete regrowth of the amorphous region. 36 However, the observed diffusion may have resulted from two possible reported mechanisms: (i) diffusion enhancement due to mobile arsenic clusters 31 that formed as a result of the as-implanted arsenic peak concentration following epitaxial growth (ϳ4 ϫ 10 20 cm Ϫ3 ) being significantly above the 800ЊC solid solubility limit of ϳ1.5 ϫ 10 20 cm Ϫ3 37 ; (ii) diffusion enhancement due to defects or excess vacancies. [30][31][32] These defects of or vacancies were inadequately annealed or diffused during the in situ clean at 800ЊC for 15 s, but could be completely eliminated at 950ЊC for 10 s, the RTA thermal budget.…”

Section: Resultsmentioning

confidence: 99%

“…36 However, the observed diffusion may have resulted from two possible reported mechanisms: (i) diffusion enhancement due to mobile arsenic clusters 31 that formed as a result of the as-implanted arsenic peak concentration following epitaxial growth (ϳ4 ϫ 10 20 cm Ϫ3 ) being significantly above the 800ЊC solid solubility limit of ϳ1.5 ϫ 10 20 cm Ϫ3 37 ; (ii) diffusion enhancement due to defects or excess vacancies. [30][31][32] These defects of or vacancies were inadequately annealed or diffused during the in situ clean at 800ЊC for 15 s, but could be completely eliminated at 950ЊC for 10 s, the RTA thermal budget.…”

Section: Resultsmentioning

confidence: 99%

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Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

O’Neil¹,

Öztürk²,

Batchelor

et al. 1999

J. Electrochem. Soc.

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In this report, we present results on the low thermal budget deposition of selective silicon epitaxy on heavily arsenic implanted substrates using Si2H6 and Cl2 in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. The selectivity of silicon to SiO2 as well as the silicon growth kinetics, epitaxial quality, and dopant incorporation for varying substrate implant dose conditions and varying levels of chlorine during processing were investigated. We demonstrate that an increase in the arsenic implant dose can reduce the silicon growth by means of an inherent incubation time for deposition occurring in a chlorinated ambient. The extent to which the silicon growth suppression occurs, however, can be lessened by specific changes in the system conditions, and therefore, growth reductions due to arsenic can be minimized. In addition to changes in the silicon growth kinetics, arsenic implanted substrates have demonstrated a tendency to degrade the surface morphology and enhance the density of defects within the deposited silicon epitaxial films. Furthermore, by depositing the silicon film immediately following implantation and prior to any high temperature anneal, movement of arsenic into the deposited silicon layers has been observed at growth temperatures as low as 800°C. Therefore, the incorporation of arsenic into the deposited epitaxial films has been found to be controllable such that abrupt profiles or intentional diffuse structures can be achieved by variation of the process sequence and the annealing conditions. © 1999 The Electrochemical Society. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

O’Neil¹,

Öztürk²,

Batchelor

et al. 1999

J. Electrochem. Soc.

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Implanted impurity behaviour in silicon subjected to transient heating

Борисенко

Yudin

1988

Phys. Stat. Sol. (a)

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Substitutional impurity diffusion in transiently heated silicon is considered to be enhanced by nonequilibrium defect formation and internal elastic stresses connected with supersaturated impurity solution dissociation. The diffusion equation for these conditions is established and numerically solved to predict impurity profiles and sheet resistance of boron, phosphorus, arsenic, and antimony implanted silicon crystals after rapid thermal processing.

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Investigation of AsO clustering in si

Kögler

Wieser

Albrecht

et al. 1989

Phys. Stat. Sol. (a)

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The electrical activation of arsenic in silicon at high oxygen concentrations is investigated using a double implantation of arsenic and oxygen and RTA treatment. The presence of the high oxygen concentration is responsible for the occurrence of electrically inactive arsenic after high temperature annealing. AsO clustering takes place at about 900°C in times shorter than 5 s if the oxygen concentration exceeds 5.2 × 1020 cm−3. The activation behaviour of the AsO clusters during RTA can be described by an equilibrium reaction As+ + 3 O ⇌ AsO3.

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Transient enhanced diffusion and electrical activation of As in Si during rapid thermal annealing

Cited by 6 publications

References 5 publications

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

Implanted impurity behaviour in silicon subjected to transient heating

Investigation of AsO clustering in si

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