Transient characteristics of gan-based heterostructure field-effect transistors

Kohn, E.; Daumiller, I.; Kunze, M.; Neuburger, Martin; Seyboth, M.; Jenkins, T.; Sewell, J.; Norstand, J. Van; Smorchkova, Y.; Mishra, Umesh K.

doi:10.1109/tmtt.2002.807687

Cited by 65 publications

(41 citation statements)

References 23 publications

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“…7 and 10). The time constant (∼0.1 s) is the RC charging/discharging time [39] or the transit time that it takes for an electron to reach the traps that are deep in the buffer. In fact, Binari et al ascribed the current collapse induced by a high current and a high V DS pulse to the trapping in the buffer [3], which is consistent with our result.…”

Section: B Detrapping Behaviormentioning

confidence: 99%

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Joh

Alamo

2011

IEEE Trans. Electron Devices

379

245

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Abstract-Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements. Its uniqueness is that it is amenable to integration with electrical stress experiments in long-term reliability studies. We present the details of the measurement and analysis procedures. With this method, we have investigated the trapping and detrapping dynamics of GaN HEMTs. In particular, we examined layer location, energy level, and trapping/detrapping time constants of dominant traps. We have identified several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.

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Section: B Detrapping Behaviormentioning

confidence: 99%

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Joh

Alamo

2011

IEEE Trans. Electron Devices

379

245

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“…͓DOI: 10.1063/1.2798500͔ AlGaN / GaN heterostructure field-effect transistors ͑HFETs͒ have been the subject of intense investigation due to their importance for microwave and high temperature/high power applications. 1,2 The mobility of electrons in the twodimensional electron gas ͑2DEG͒ channel is crucial to the ultimate performance of an AlGaN / GaN HFET. It has been shown that electron mobility is dominated by optical phonon scattering or possibly interface roughness scattering at room temperature.…”

Section: Electron Mobility Related To Scattering Caused By the Strainmentioning

confidence: 99%

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures

Zhao

Lin

Corrigan

et al. 2007

Applied Physics Letters

110

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Using the measured capacitance-voltage curves of Ni Schottky contacts with different areas on strained AlGaN∕GaN heterostructures and the current-voltage characteristics for the AlGaN∕GaN heterostructure field-effect transistors at low drain-source voltage, we found that the two-dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer.

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“…Al x Ga 1-x N/GaN heterostructure have a large band offset, large polarization effect [1] high two-dimensional electron gas densities, and a high saturation electron drift velocity [2][3][4][5][6][7][8][9] that makes them suitable for many microelectronic applications.…”

Section: Introductionmentioning

confidence: 99%