Transient capacitance measurements of interface states on the intentionally contaminated Si-SiO2 interface

Studies on electrical and the dielectric properties in MS structures

“…Also, the changes in frequency have an important effect on determination of the M-S structures [17,19]. The voltage and frequency dependence of series resistance (R S ) at metal-semiconductor structures play an important role in the determination of the main parameters of the devices [9,[20][21][22]. When voltage is applied across the M-S structure, the combination of the interfacial insulator layer, depletion layer and the series resistance of the device will share applied voltage.…”

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

“…Due to the presence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The importance in Si technology, the semiconductor/ insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Investigation of dielectric properties of heterostructures based on ZnO structures

“…Chemical cleaning procedures described previously in detail were applied to the wafer [19,20]. Then it was put inside a vacuum chamber to form a good ohmic contact with a thickness of 1240 Å on unpolished surface using Al (99.999 %).…”

“…Generally, the polarizations of dipoles are classified into four groups as atomic/ionic (α a ) polarization, electron (α e ) polarization, interface (α i ) polarization and oriental/dipolar (α o ) polarization [20][21][22][23][24][25][26]. Material polarization is one of these polarization mechanisms with a short range motion of the charge.…”