Transient annealing of defects in irradiated silicon devices

Section: ) Induced Dark Current Evolution: Thementioning

confidence: 70%

Radiation-induced dark current in CMOS active pixel sensors

Cohen

David

2000

“…Effects related to low temperature leakage current annealing were already observed in [8], [9]. According to the empirical parameterization of the next section, the leakage current reduction during the journey due to annealing would be of the order of 35%.…”

Section: Introductionmentioning

confidence: 89%

“…Vacancies are mobile above 20 K and recombine or generate complex stable defects. According to [11] and [18], they anneal completely after 20 minutes at temperatures below C. The dynamics of unstable defects is a possible explanation for the transient annealing (with a duration below one second) observed in [8]. Complex stable defects are bound states of vacancies with other vacancies or donor or acceptor impurities.…”

Section: Definitions and Useful Formulasmentioning

confidence: 99%

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Measurement of the Current Related Damage Rate at ${-}50^\circ$C and Consequences on Macropixel Detector Operation in Space Experiments

Segneri

Brown

Kuhnle

et al. 2009

A diode irradiation with 10-MeV protons was performed to measure the silicon current related damage rate at a temperature of 50 C. This measurement was fundamental to predict the performance of the detectors which will be used in the X-ray spectrometers of the Simbol-X and BepiColombo space missions. These detectors consist of arrays of large area silicon drift chambers with integrated depleted p-channel field effect transistors. The leakage current increase due to radiation damage and its consequent energy resolution degradation can be critical for these missions, specially for BepiColombo. These effects cannot be predicted because, during the whole missions, the sensors will be kept at temperatures below 40 C, and the existing models are based on measurements on structures which underwent annealing at higher temperatures.An irradiation experiment was performed to measure the current related damage rate at 50 C, and the obtained value was (11 1 0 2) 10 17 A/cm. This result implies that it will be possible to achieve the Simbol-X energy resolution, whereas some annealing strategies will be needed for the BepiColombo mission. The annealing behaviour at 60 C was studied as well and the results are in agreement with the already available measurements.

“…DC measurements in irradiated devices have shown an evolution of the defected structures over different time scales ranging from a few seconds to several days [4,5]. However, simulations performed in [2] have shown that the main changes in the defect structure all occur T Fig.…”

Section: Introductionmentioning

confidence: 99%

Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties

Jay

Hémeryck

Richard

et al. 2018

-A first principles study of the defects generated by displacement cascades in silicon is performed. This work is particularly focused on two defect configurations; the di-vacancy and the triinterstitial, both identified in previous Molecular Dynamics (MD) and kinetic Activation Relaxation Technique (k-ART) simulations [1,2]. By combining structural, energy and migration properties evaluated within the framework of the standard Density Functional Theory (DFT) and electronic properties calculated within the G 0 W 0 approximation, a reconstruction of the corresponding thermallyactivated electrical signal generated by each defect is obtained. Their contribution to Dark Current (DC) and Dark Current Random Telegraph Signal (DC-RTS) measured in image sensors is then discussed.