Radiation-induced dark current in CMOS active pixel sensors

Cohen, Melvin R.; David, Jean‐Pierre

doi:10.1109/23.903797

Cited by 52 publications

(24 citation statements)

References 15 publications

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“…Previously obtained experimental data of ionizing radiationinduced dark current as a function of temperature validate the analysis presented in this section [21], [22], [28], [33], [34]. These data cover both CMOS APS [21], [22], [28] and CCD [33], [34] image sensors.…”

Section: Ionizing Radiation-induced Dark Currentsupporting

confidence: 77%

“…These data cover both CMOS APS [21], [22], [28] and CCD [33], [34] image sensors. The activation energy was found to be 0.63 eV in [21], from 0.50 to 0.70 eV in [22], 0.50 eV in [28], 0.63 eV in [33], and 0.50 and 0.68 eV in [34]. The activation energy is highly dependent on the fabrication process but is generally half the bandgap energy , which is 1.12 eV at room temperature [32].…”

Section: Ionizing Radiation-induced Dark Currentmentioning

confidence: 99%

“…No data were reported beyond 21 Krd (Si). In [22] and [25], a 32 32 PD CMOS APS and a 32 32 photogate (PG) CMOS APS image sensors, with a pixel size of 50 50 m , are reported. The process used to fabricate the image sensors was a standard 1.2-m process.…”

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confidence: 99%

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Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Eid¹,

Chan²,

Fossurn³

et al. 2001

IEEE Trans. Nucl. Sci.

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Abstract-An ionizing radiation-tolerant CMOS active pixel sensor (APS) image sensor test chip was designed employing the physical design techniques of enclosed geometry and -channel guard rings. The test chip was fabricated in a standard 0.35-m CMOS process that has a gate-oxide thickness of 7.0 nm. It was irradiated by a -ray source up to a total ionizing radiation dose level of approximately 30 Mrd (Si) and was still functional. The most pronounced effect was the increase of dark current, which was linear with total dose level. The rate of dark current increase was about 1 to 2 pA/cm 2 /Krd (Si), depending on the design of the pixel. The results demonstrate that CMOS APS image sensors can be designed to be ionizing radiation tolerant to total dose levels up to 30 Mrd (Si). The fabrication process is standard CMOS, yielding a significant cost advantage over specialized radiation hard processes.Index Terms-Active pixel sensor, CMOS active pixel sensor,

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Section: Ionizing Radiation-induced Dark Currentsupporting

confidence: 77%

Section: Ionizing Radiation-induced Dark Currentmentioning

confidence: 99%

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Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Eid¹,

Chan²,

Fossurn³

et al. 2001

IEEE Trans. Nucl. Sci.

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“…15 The high activation energies are attributed to the variation of impurity level in the silicon band-gap. 18 When the activation energy decreases and reaches almost mid-gap value, the highest dark signal value shown as a dark signal spike appears in the pixel.…”

Section: A Mean Dark Signalmentioning

confidence: 99%

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

et al. 2014

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The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology. The flux of neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal spike, dark signal non-uniformity (DSNU), noise (VN), saturation output signal voltage (VS), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike.

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“…9,29 The activation energies are correlated with the amplitude of the dark signal spikes and the high activation energies are attributed to the variation of the impurity level in the silicon band-gap. 30 When the activation energy decreases and reaches almost mid-gap value, the highest dark signal value shown as a dark signal spike appears in the pixel. Before irradiation, there is no dark signal spike in the array pixels shown in Fig.…”

Section: Dark Signal Spike Increasementioning

confidence: 99%

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

et al. 2014

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The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed to 1MeV neutron-equivalent fluences of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal non-uniformity (DSNU), and dark signal spikes (hot pixels) versus neutron fluence are investigated. The degradation mechanisms of the dark signal in CCDs are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from the CCDs irradiated by neutrons are presented to investigate the generation of dark signal spike. The 1D and 2D figures which show the output signal voltage of pixels in dark images irradiated by different neutron beam fluences, are presented to compare the degradation of KD, DSNU, and dark signal spike.

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Radiation-induced dark current in CMOS active pixel sensors

Abstract: Degradation behavior of CMOS active pixel sensors (APS) exposed to protons and Cobalt60 is presented. The most sensitive parameter is the dark current: the mean value of the degradation is always dominated by ionizing effects.

Cited by 52 publications

References 15 publications

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

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