2017
DOI: 10.1117/12.2262664
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Transient absorption imaging of carrier dynamics in disordered semiconductors

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Cited by 2 publications
(2 citation statements)
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“…While dependent on signal to noise levels, a typical 100 × 100 pixel image can be collected in 3−4 min of experimental time. 12 Although the complementarity between ΔT/T and ΔR/R images is generally present across the entirety of the domain, there are regions that appear to deviate. These regions are often near edges or exhibit significant surface roughness, which suggests that scattering, which reduces the overall FP mode contrast, 13 is likely responsible for the deviation.…”
Section: Resultsmentioning
confidence: 99%
“…While dependent on signal to noise levels, a typical 100 × 100 pixel image can be collected in 3−4 min of experimental time. 12 Although the complementarity between ΔT/T and ΔR/R images is generally present across the entirety of the domain, there are regions that appear to deviate. These regions are often near edges or exhibit significant surface roughness, which suggests that scattering, which reduces the overall FP mode contrast, 13 is likely responsible for the deviation.…”
Section: Resultsmentioning
confidence: 99%
“…39 Similarly, transient reflectivity, while complicated by the Fabry−Perot mode interference that contributes to the signal, is predominately sensitive to changes in the dielectric function near the surface, where there is a large mismatch in the index of refraction. 40 While it is difficult at present to identify the specific morphological defects that give rise to reduced charge carrier mobility and reduced diffraction pattern contrast, the most likely candidate is anisotropic lattice strain, caused by, perhaps, a mismatch of thermal expansion coefficients upon cool-ing. 27,41,42 In the band picture of charge carrier transport, disruption of the periodicity of the lattice will reduce the mean scattering time of charge carriers, reducing the observed mobility.…”
mentioning
confidence: 99%