Transformer Current Ringing in Dual Active Bridge Converters

Qin, Zian; Shen, Zhan; Blaabjerg, Frede; Bauer, Pavol

doi:10.1109/tie.2020.3040681

Cited by 26 publications

(22 citation statements)

References 55 publications

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“…Similarly, the extended π-shaped network could be utilized to model the circuit To modify the dv/dt [8,9] to suppress the voltage spike amplitude (VSA) using the extra parallel capacitor involves deceasing the switching speed and adding extra hardware components. The optimization of the inductor and transformer stray capacitors [10,11] will increase the complexity of the design procedure. The split inductance tunning between the HV and LV side [12] is often a special case without generality, which may lose effectiveness for multi-port converters.…”

Section: Equivalent Circuit Of the Transformersmentioning

confidence: 99%

“…The active selective harmonic-elimination general phase-shift PWM method is introduced to suppress the HFO of the AC-link in MMAB [13], which has the potential to suppress the HFO of the transformer of the DAB and MAB, but has not been derived or verified. On the other hand, the branches of the DAB [10] and MMAB converters [13] are symmetrical with 1:1 transformer turn ratios and the same phase-shift inductors.…”

Section: Introductionmentioning

confidence: 99%

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High-Frequency Oscillation of the Active-Bridge-Transformer-Based DC/DC Converter

Wei

Wen

2022

Energies

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The dual-active-bridge converter (DAB) has attracted tremendous attention in recent years. However, its EMI issues, especially the high-frequency oscillation (HFO) induced by the dv/dt and parasitic elements of the transformer, are significant challenges. The multi-active-bridge converter (MAB) based on the multi-winding transformer also faces similar problems, which are even more complicated. This article investigates the HFO of active-bridge-transformer-based DC/DC converters including DAB and MAB. Firstly, the general HFO model is studied using the analysis of the AC equivalent circuit considering the asymmetrical parameters. Ignoring the AC resistance in the circuit, the high-order model of the voltage oscillation could be reduced to a second-order system. Based on the simplified model, the oscillation voltage generated by an active bridge is analyzed in the time domain. Then, a universal active voltage-oscillation-suppression method-selected harmonic-elimination phase-shift (SHE PS) modulation method is proposed. The impacts of the system parameters on the method are also revealed. The experimental results show the excellent performance of the proposed active suppression method, with voltage spike amplitude (VSA) reductions of 92.1% and 77.8% for the DAB and MAB prototypes, respectively.

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Section: Equivalent Circuit Of the Transformersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Frequency Oscillation of the Active-Bridge-Transformer-Based DC/DC Converter

Wei

Wen

2022

Energies

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“…The other important issues such as GaN power integration, integrated over-current protection, frequencydependent on-resistance, EMI, and also transformer current ringing at higher turns ratios are explored by the various researchers in the literature. [99][100][101][102][103] The power density and efficiency are further improved with the new converter topologies. The converter design depends on the various aspects like power density, efficiency, device voltage stresses, and the switching frequency.…”

Section: Dc-dc Convertermentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…The parasitic parameters in passive components are of growing importance [1]- [7] due to the exponentially increasing use of wide-band-gap devices in power electronic converters to operate at higher frequencies with faster switching transients [8]- [10]. Faster switching speed can result in larger currents due to the parasitic capacitance in inductors [11], which will cause extra losses in transistors [12] and EMI/EMC issues [1], [13], and therefore limit the potential performance of high-frequency converters.…”

Section: Introductionmentioning

confidence: 99%

Rethinking Basic Assumptions for Modeling Parasitic Capacitance in Inductors

Zhao

Luan

Shen

et al. 2022

IEEE Trans. Power Electron.

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This paper rethinks the basic assumptions often used in analytically modeling parasitic capacitance in inductors. These assumptions are classified in two commonly-used physicsbased analysis methods: the lumped capacitor network method and the energy conservation method. The lumped-capacitor network method is not the proper solution for calculating the equivalent parasitic capacitance in inductors at the first resonant frequency, but rather represents the equivalent parasitic capacitance above the last resonant frequency. The energy-conservation based method is shown to be more accurate and a reasonable solution to model the equivalent parasitic capacitance at the first resonant frequency. Multiple case studies of inductors are used for verifying the theory.

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Transformer Current Ringing in Dual Active Bridge Converters

Cited by 26 publications

References 55 publications

High-Frequency Oscillation of the Active-Bridge-Transformer-Based DC/DC Converter

High-Frequency Oscillation of the Active-Bridge-Transformer-Based DC/DC Converter

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Rethinking Basic Assumptions for Modeling Parasitic Capacitance in Inductors

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